Patents Assigned to Shin-Etsu Handotui Co., Ltd.
  • Dielectrically isolated substrate and a process for producing the same
    Patent number: 5336634
    Abstract: A dielectrically isolated substrate is comprised of a single-crystal silicon substrate or bond substrate and a single-crystal silicon substrate or base substrate bonded together into a composite structure. The bond substrate has a (110) plane as a main crystal plane and is provided with vertically walled moats and substantially squared islands positioned adjacent to the moats. The moats and islands result from anisotropic etching using a specific mask pattern. Also disclosed is a process for producing the composite structure.
    Type: Grant
    Filed: March 2, 1993
    Date of Patent: August 9, 1994
    Assignee: Shin-Etsu Handotui Co., Ltd.
    Inventors: Masatake Katayama, Makoto Sato, Yutaka Ohta, Mitsuru Sugita, Konomu Ohki