Abstract: Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a process chamber including at least one sputter gun inducing a first plasma on a film or a flat plate; a loading unit provided at one side of the process chamber and including first and second loading chambers loading the film or the flat plate into the process chamber; and an unloading unit provided at the other side of the process chamber facing the loading unit and including first and second loading chambers including first and second unloading chambers unloading the film or the flat plate from the process chamber, wherein the first loading chamber is connected to the first unloading chamber or the second loading chamber is connected to the second unloading chamber at both sides of the process chamber.

Abstract: An exposure mask and a method of forming a contact hole of a semiconductor device using the same, in which micro patterns can be formed are disclosed herein. In an aspect, an exposure mask method includes a mask substrate, a light-shield pattern formed on the mask substrate, and a transparent pattern in which a plurality of patterns, which are limited to the light-shield pattern and have different short-direction widths and long-direction widths, form a group which is repeatedly arranged. Accordingly, micro photoresist patterns can be formed uniformly.

Abstract: There is disclosed a method of fabricating a piezoelectric ceramics. It can obtain a small grain size and a fine grain phase by forming a combined powder being major components, stirring the combined powder with (COOH)2 water solution, dropping a Pb(NO3)2 water solution into the stirred powder, and forming a PZT powder by calcinations and sintering processes.