Abstract: A solar cell and a manufacturing method thereof are provided. The method includes forming a microstructure including a texturing on the surface of a semiconductor substrate of a first conductive type, forming a plurality of nanostructures on the surface of the semiconductor substrate, forming an emitter layer by implanting impurities of a second conductive type opposite to the first conductive type in a front face of the semiconductor substrate, forming an anti-reflective coating (ARC) on the emitter layer, forming a front electrode passing through a portion of the ARC and being coupled to the emitter layer, and forming a back electrode on a rear face of the semiconductor substrate of the first conductive type, the rear face being opposite to the face on which the front electrode is formed. A dominant light-collecting characteristic can be approached by forming nanostructures on a semiconductor substrate of a solar cell.

Abstract: Provided are a solar cell and a method of manufacturing the same. The method includes implanting impurities of a second conductivity type opposite to a first conductivity type into a front surface of a semiconductor substrate of the first conductivity type to form an emitter layer, forming a mask layer on the emitter layer, patterning the mask layer by coating etching paste on a portion of the mask layer where a front electrode will be formed, implanting high-concentration impurities into the portion of the mask layer where the front electrode will be formed to form a heavily doped region, removing the remaining mask layer, forming an anti-reflective coating (ARC) on the emitter layer, forming the front electrode on the front surface of the semiconductor substrate, and forming a rear electrode on a rear surface of the semiconductor substrate.

Abstract: Provided are a solar cell and a method of manufacturing the same. The method includes implanting impurities of a second conductivity type opposite to a first conductivity type on the entire surface of a semiconductor substrate of the first conductivity type to form an emitter layer, forming a first anti-reflective coating (ARC) layer on the emitter layer, patterning a portion of the first anti-reflective coating (ARC) layer where a front electrode will be formed, forming a second anti-reflective coating (ARC) layer on the first anti-reflective coating (ARC) layer and the emitter layer, and forming the front electrode and a rear electrode on front and rear surfaces of the semiconductor substrate. In this method, a double structure of two anti-reflective coating (ARC) layers with different thicknesses may be formed to make electrode patterns distinct, thereby facilitating alignment of electrodes.