Abstract: A discharge examination device for examining discharge of a wire-bonding apparatus that applies a voltage between a torch electrode and a wire to procure the discharge therebetween includes a current detection unit, a timer unit and a discharge determination unit. The current detection unit detects a discharge current flowing through the wire. The timer unit measures discharge detection time after application of the voltage before detection of the discharge current. The discharge determination unit determines whether or not the discharge is abnormal based on the discharge detection time. With this, a discharge examination device, a wire-bonding apparatus, and a discharge examination method that are capable of detecting abnormality of discharge are provided.

Abstract: A bonding apparatus and a bonding method are provided. The bonding apparatus bonds a semiconductor die to a substrate by thermocompression through an adhesive material. This bonding apparatus is provided with: a bonding tool which has a bonding surface that holds the semiconductor die through a first portion of a tape, and a pair of first tape constraining surfaces that are arranged so as to sandwich the bonding surface and constrain a second portion of the tape: tape constraining mechanisms which have a second tape constraining surface that presses the tape against the first tape constraining surfaces; and a control part which controls the movements of the bonding tool and the tape constraining mechanisms.

Abstract: This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion

Abstract: A bonding apparatus 10 having a diagonal optical system 30, the bonding apparatus moves a capillary 24 down to a first heightwise position to calculate a position A11 of a tip end portion of the capillary 24 and a position A12 of a tip end portion of the capillary in an image on an imaging plane of the diagonal optical system 30, and similarly moves the capillary 24 down to a further lower second heightwise position to calculate a position A21 of the tip end portion of the capillary 24 and a position A22 of the tip end portion of the capillary in the image on the imaging plane. The bonding apparatus then estimates the position of the landing point of the capillary 24 on a bonding target 8 based on positional data for the four calculated positions A11, A12, A21, and A22, the first heightwise position, and the second heightwise position. With this, it is possible to use the diagonal optical system in the bonding apparatus to further improve positional accuracy in the bonding process.

Abstract: [Object] To provide a plasma apparatus capable of igniting plasma reliably over a long period. [Solution] The apparatus includes a hollow structural body (11) having a hollow structure along an axis, a first electrode (12) disposed inside the hollow structural body (11), and a second electrode (14) having a structure that externally covers a plasma generation area (13) of the hollow structural body (11). The first electrode (12) has a deformation structure (12b) within the plasma generation area of the hollow structural body.

Abstract: A flip-chip bonding apparatus (100) is provided with: a bonding tool (10) that includes a base (11), and an island (13) that vacuum-sucks, to a surface (14) thereof, a semiconductor die (70) having protruding electrodes (72, 73) that are disposed on both the surfaces; and a heater (20) that heats the semiconductor die (70) vacuum-sucked to the island (13). The flip-chip bonding apparatus heats the semiconductor die (70), bonds the protruding electrodes (73) of the semiconductor die (70) to protruding electrodes (82) of a semiconductor die (80), and seals, using a non-conductive film (NCF) (75), a gap between the semiconductor die (70) and the semiconductor die (80). Continuous vacuum suction holes (15) are provided in the base (11), said continuously vacuum suction holes being at positions adjacent to the outer peripheral surface of the island (13).

Abstract: The disclosure includes: a first lifting step for bonding a wire at a first position (13) with a capillary and for lifting the capillary up to a first height H1 while feeding the wire; a circular arc lifting step for carrying out a circular arc motion for moving the capillary in a circular arc toward a second position (14) by a first distance (L5), and then carrying out a lifting motion for lifting the capillary while feeding the wire; a circular arc motion step for moving the capillary in a circular arc toward the first position (13) by a second distance (L3+L4); a second lifting step for lifting the capillary up to a second height H4; and a looping step for looping the capillary to the second position (14), thereby forming a wire loop having a predetermined height on a substrate by bonding the wire at the second position (14).

Abstract: Provided is a flip chip mounting apparatus for mounting chips (400) to a substrate (200), and the apparatus includes at least one sectionalized mounting stage (45) divided into a heating section (452) and a non-heating section (456), the heating section being for heating a substrate (200) fixed to a front surface of the heating section, the non-heating section not heating the substrate (200) suctioned to a front surface of the non-heating section. With this, it is possible to provide an electronic-component mounting apparatus that is simple and capable of efficiently mounting a large number of electronic components.

Abstract: A mounting apparatus is equipped with: an attachment including a surface for attaching a semiconductor die; a heater which is disposed on a side of the attachment opposite to the surface and heats the semiconductor die attached to the surface; a suction hole which penetrates through the attachment and the heater integrally and opens in the surface; and a body portion which is disposed on a side of the heater opposite to the attachment and on which a vacuum suction path in communication with the suction hole is arranged. The vacuum suction path includes a storage portion which stores a foreign matter consisting of a liquid formed by condensation of a gas suctioned from the suction hole or a solid formed by solidification of the liquid.

Abstract: Provided is a bonding method for directly bonding an electrode part of a chip component to a bonding part provided on a substrate that is a bonding target, the method comprising: a step for placing the substrate on a stage inside a liquid vessel; a step for injecting liquid into the liquid vessel; and a step for bonding the electrode part of the chip component to the bonding part (electrode part) of the bonding target by superimposing the chip component held by a bonding head in the liquid stored in the liquid vessel over the bonding target and then applying pressure thereto.

Abstract: The electronic component handling unit comprises: a main body; a rotating shaft attached to the main body; a flip head attached to the rotating shaft; and a stepping motor attached to the main body, and causing the rotating axis to rotate to invert the flip head. The flip head has: a base connected to the rotating shaft; and a plurality of pickup nozzles attached on the base in a straight line in such a manner that the alignment direction is tilted 45° with respect to the direction in which the rotating axis extends. As a result, a column of picked-up semiconductor chips can be flipped-over while simultaneously changing the alignment direction thereof with a simple constitution.

Abstract: A mounting apparatus for mounting an electronic component onto a substrate includes: a mounting tool (14) configured to hold the electronic component by a holding surface (14a) as a tip end surface of the mounting tool; a movement mechanism configured to move the mounting tool (14) relatively with respect to the substrate; an angle detection mechanism configured to measure an inclination of a planar-plated measurement jig (64) held by the holding surface (14a); and a controller configured to control driving of the mounting apparatus, wherein during inspection of the holding surface (14a), the controller causes the mounting tool (14) to hold the measurement jig (64), and the angle detection mechanism to measure the inclination of the measurement jig (64). With this, a mounting apparatus capable of measuring a condition of the holding surface of the mounting tool more correctly is provided.

Abstract: A mounting apparatus includes a Y-axis movable base 36 movable in a Y-axis direction, a Z-axis movable base 40 attached to the Y-axis movable base 36 and movable in a Z-axis direction, a mounting head 12 attached to the Z-axis movable base 40 and including a mounting tool 16 for sucking and holding a semiconductor chip, a pressurizing mechanism 20 attached to the Y-axis movable base 36 and arranged to apply a force in the Z-axis direction to the mounting head 12, and a pressure receiving member 22 provided independently of the Y-axis and Z-axis movable bases 36 and 40 and installed in proximity to the pressurizing mechanism 20 to receive a reaction force in the Z-axis direction from the pressurizing mechanism 20, the pressurizing mechanism 20 slidable on the pressure receiving member 22. This prevents the mounting apparatus from being increased in the total size while maintaining the mounting accuracy high.

Abstract: A method of manufacturing a semiconductor device in which a prescribed target lamination number of semiconductor chips are laminated on a substrate, the method includes: a first lamination step of laminating while temporarily bonding one or more semiconductor chips on the substrate to thereby form a first chip laminate body; a first permanent bonding step of pressurizing while heating from the upper side of the first chip laminate body to thereby collectively and permanently bond the one or more semiconductor chips; a second lamination step of sequentially laminating while temporarily bonding two or more semiconductor chips on the permanently bonded semiconductor chips to thereby form a second chip laminate body; and a second permanent bonding step of pressurizing while heating from the upper side of the second chip laminate body to thereby collectively permanently bond the two or more semiconductor chips.

Abstract: The disclosure is provided with: a temporary crimping step in which one or more semiconductor chips 10 are sequentially laminated while being temporarily crimped in each of two or more locations on a substrate 30 to thereby form chip stacks ST in a temporarily crimped state; and a permanent crimping step in which the top surfaces of all of the chip stacks ST formed in the temporarily crimped state are sequentially heated, pressurized, and permanently crimped. Furthermore, a specifying step is provided prior to the temporary crimping step for specifying a separation distance Dd which is the distance from the chip stacks ST under permanent crimping to a location at which the temperature of the substrate 30, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature Td, and in the temporary crimping step, the chip stacks ST in the temporarily crimped state are formed separated from each other by the separation distance Dd or more.

Abstract: A method for manufacturing a semiconductor device and a mounting apparatus are provided. The method for manufacturing a semiconductor device includes: a placing step for placing, on a bonding surface, a temporary substrate which is transmissive with respect to an alignment mark; an image acquisition step for acquiring an image of the alignment mark and an image of a semiconductor die; a correction step for correcting, on the basis of the image of the alignment mark and the image of the semiconductor die acquired in the image acquisition step, the position in the horizontal direction of a bonding head that pressure bonds the semiconductor die to the temporary substrate; and a pressure bonding step for pressure bonding the semiconductor die to the transmissive substrate on the basis of the corrected position in the horizontal direction.

Abstract: A wire bonding method comprises: preparing a wire bonding apparatus; a step of forming a free air ball; a first height measuring step of measuring the height of a first electrode by detecting whether the free air ball is grounded to the first electrode; a second height measuring step of measuring the height of a second electrode by detecting whether the free air ball is grounded to the second electrode; a first bonding step of controlling the height of a bonding tool based on the measurement result in the first height measuring step, and bonding the free air ball to the first electrode; and a second bonding step of controlling the height of the bonding tool based on the measurement result in the second height measuring step, and bonding a wire to the second electrode to connect the first and the second electrodes. Thus, electrodes can be correctly bonded.

Abstract: This wire clamp apparatus calibration method comprises: a step for driving a driving piezoelectric element by applying a predetermined frequency that causes a pair of arm portions to vibrate in an opening/closing direction; a step for detecting whether or not end portions of the pair of arm portions collide with each other on the basis of an output current outputted from the driving piezoelectric element when the pair of arm portions are vibrating in the opening/closing direction; a step for calculating, on the basis of the detection result, reference voltages in a state where the pair of arm portions are closed; and a step for performing calibration of a drive voltage to be applied to the driving piezoelectric element on the basis of the reference voltages. Accordingly, accuracy improvement and stabilization in an opening/closing operation of the wire clamp apparatus can be achieved.

Abstract: A ball forming device 50 for forming a ball 43 at a tip of a wire 42 by producing discharge between a torch electrode 48 and the tip of the wire 42, the device includes: a current supply unit 54 configured to supply a ball-forming current between the torch electrode 48 and the tip of the wire 42; and a current control unit 57 configured to control the current supply unit 54, so that a signal of the ball-forming current for a predetermined period includes a first period in which the signal takes a predetermined current value and a second period including a triangle wave. With this, it is possible to provide a ball forming device, a wire-bonding apparatus, and a ball formation method that are capable of suppressing formation of deformed balls.

Abstract: A bonding apparatus, which includes: an intermediate stage; a transfer unit configured to transfer a semiconductor chip and to place the semiconductor chip on the intermediate stage; and a first bonding unit and a second bonding unit each configured to pick up the semiconductor chip from the intermediate stage, and to bond the semiconductor chip to a circuit substrate. The intermediate stage moves between a first position and a second position. The first position is a position at which the first bonding unit is allowed to pick up the semiconductor chip, and the second position is a position at which the second bonding unit is allowed to pick up the semiconductor chip. With this, it is possible to provide a bonding apparatus capable of reducing processing time per circuit substrate and suppressing an increase of a space, as well as such a bonding method.