Abstract: A metal insert at least partially embedded in a molded resin mass comprises a metal insert blank, and a substantial amount of nickel or nickel alloy granulations produced over a surface of the metal insert blank, and the size of the granulations is at most 1.0 .mu.m. The metal insert blank is treated by a first electrolytic plating process such that a substantial quantity of copper nuclei spreaded over the surface, and the copper nuclei are grown up as the nickel or nickel alloy granulations by a second electrolytic-plating process. The first electrolytic-plating process is controlled such that an average thickness of plating is from about 0.5 to about 1.0 .mu.m, and the second electrolytic-plating process is controlled such that an average thickness of plating is from about 0.5 to about 1.5 .mu.m.

Abstract: A multi-layer lead frame for a semiconductor device includes a signal layer made of a metal strip having a signal pattern including a plurality of lead lines. A power supply or ground layer is adhered and laminated to the signal layer by means of an adhesive film. The adhesive film is an electrically insulation connector tape having through holes extending in a thickness direction. Conductive metal vias are filled in the through holes for electrically connecting the power supply or ground layer particular leads among the plurality of lead lines.