Abstract: Titanium-containing silicon nitride film bodies include a film body having an essentially amorphous structure and containing particle-like titanium nitride, a film body consisting mainly of .alpha.-type crystal and containing particle-like TiN deposited in the crystal and having a crystal orientation of crystal face (OOl), and a film body consisting mainly of .beta.-type crystal and containing column-like TiN deposited in the crystal along the c-axis direction thereof and having a crystal orientation of crystal face (OOl), which are produced by blowing a nitrogen depositing source, a silicon depositing source and a titanium depositing source on a substrate heated at 500.degree.-1,900.degree. C. by means of a blowpipe composed of a pipe assembly to perform chemical vapordeposition reaction.