Patents Assigned to Shocking Technologies, Inc.
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Patent number: 8399773Abstract: Various aspects provide for incorporating a VSDM into a substrate to create an ESD-protected substrate. In some cases, a VSDM is incorporated in a manner that results in the ESD-protected substrate meeting one or more specifications (e.g., thickness, planarity, and the like) for various subsequent processes or applications. Various aspects provide for designing a substrate (e.g., a PCB) incorporating a VSDM, and adjusting one or more aspects of the substrate to design a balanced, ESD-protected substrate. Certain embodiments include molding a substrate having a VSDM layer into a first shape.Type: GrantFiled: January 27, 2010Date of Patent: March 19, 2013Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Bhret Graydon, Djabbar Moustafaev, Shurui Shang, Robert Fleming
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Patent number: 8362871Abstract: A substrate device includes a layer of non-linear resistive transient protective material and a plurality of conductive elements that form part of a conductive layer. The conductive elements include a pair of electrodes that are spaced by a gap, but which electrically interconnect when the transient protective material is conductive. The substrate includes features to linearize a transient electrical path that is formed across the gap.Type: GrantFiled: October 28, 2009Date of Patent: January 29, 2013Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming, Ning Shi
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Patent number: 8310064Abstract: Semiconductor devices are provided that employ voltage switchable materials for over-voltage protection. In various implementations, the voltage switchable materials are substituted for conventional die attach adhesives, underfill layers, and encapsulants. While the voltage switchable material normally functions as a dielectric material, during an over-voltage event the voltage switchable material becomes electrically conductive and can conduct electricity to ground. Accordingly, the voltage switchable material is in contact with a path to ground such as a grounded trace on a substrate, or a grounded solder ball in a flip-chip package.Type: GrantFiled: February 24, 2011Date of Patent: November 13, 2012Assignee: Shocking Technologies, Inc.Inventor: Lex Kosowsky
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Patent number: 8272123Abstract: A method for designing a printed circuit board to meet a specification is described. A first voltage switchable dielectric material is placed in apposition with a first copper foil. A second voltage switchable dielectric material is placed in apposition with a second copper foil. An arcuate portion of the first copper foil is placed in apposition with a first side of an aluminum member, an adhesive substance being situated between the first copper foil and the first side of the aluminum member. An arcuate portion of the second copper foil in is placed apposition with a second side of the aluminum member, an adhesive substance being situated between the second copper foil and the second side of the aluminum member.Type: GrantFiled: January 19, 2011Date of Patent: September 25, 2012Assignee: Shocking Technologies, Inc.Inventors: Robert Fleming, Lex Kosowsky, Shurui Shang, Bhret Graydon, Xiaofeng Chen, Glen Irvin
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Patent number: 8206614Abstract: A voltage switchable dielectric material comprising a concentration of multi-component particles that are individually formed by a mechanical or mechanochemical bonding process that bonds a semiconductive or conductive-type host particle with multiple insulative, conductive, or semi-conductive guest particles.Type: GrantFiled: January 20, 2009Date of Patent: June 26, 2012Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 8203421Abstract: A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.Type: GrantFiled: April 2, 2009Date of Patent: June 19, 2012Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming, Bhret Graydon
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Patent number: 8163595Abstract: Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials may comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.Type: GrantFiled: November 23, 2010Date of Patent: April 24, 2012Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 8117743Abstract: A method includes providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.Type: GrantFiled: November 23, 2010Date of Patent: February 21, 2012Assignee: Shocking Technologies, Inc.Inventor: Lex Kosowsky
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Patent number: 7981325Abstract: One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.Type: GrantFiled: February 10, 2010Date of Patent: July 19, 2011Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 7968015Abstract: One or more embodiments provide for a light emitting diode device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio.Type: GrantFiled: July 7, 2010Date of Patent: June 28, 2011Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 7968014Abstract: One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.Type: GrantFiled: February 10, 2010Date of Patent: June 28, 2011Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 7968010Abstract: One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.Type: GrantFiled: February 10, 2010Date of Patent: June 28, 2011Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 7923844Abstract: Semiconductor devices are provided that employ voltage switchable materials for over-voltage protection. In various implementations, the voltage switchable materials are substituted for conventional die attach adhesives, underfill layers, and encapsulants. While the voltage switchable material normally functions as a dielectric cmaterial, during an over-voltage event the voltage switchable material becomes electrically conductive and can conduct electricity to ground. Accordingly, the voltage switchable material is in contact with a path to ground such as a grounded trace on a substrate, or a grounded solder ball in a flip-chip package.Type: GrantFiled: November 21, 2006Date of Patent: April 12, 2011Assignee: Shocking Technologies, Inc.Inventor: Lex Kosowsky
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Patent number: 7872251Abstract: Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.Type: GrantFiled: September 24, 2007Date of Patent: January 18, 2011Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 7825491Abstract: A voltage switchable dielectric material (VSD) material as part of a light-emitting component, including LEDs and OLEDs.Type: GrantFiled: November 21, 2006Date of Patent: November 2, 2010Assignee: Shocking Technologies, Inc.Inventor: Lex Kosowsky
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Patent number: 7793236Abstract: A substrate device is designed by identifying one or more criteria for handling of a transient electrical event on the substrate device. The one or more criteria may be based at least in part on an input provided from a designer. From the one or more criteria, one or more characteristics may be determined for integrating VSD material as a layer within or on at least a portion of the substrate device. The layer of VSD material may be positioned to protect one or more components of the substrate from the transient electrical condition.Type: GrantFiled: September 24, 2007Date of Patent: September 7, 2010Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 7695644Abstract: One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.Type: GrantFiled: July 29, 2007Date of Patent: April 13, 2010Assignee: Shocking Technologies, Inc.Inventors: Lex Kosowsky, Robert Fleming
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Patent number: 7446030Abstract: A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a mask over the layer of the voltage switchable dielectric material, and forming an electrically conductive layer. The mask includes gaps and the electrically conductive layer is formed in the gaps. The voltage switchable dielectric material has a characteristic voltage and the electrically conductive layer is formed by applying a voltage in excess of the characteristic voltage to the substrate and depositing the electrically conductive material through an electrochemical process such as electroplating.Type: GrantFiled: September 14, 2004Date of Patent: November 4, 2008Assignee: Shocking Technologies, Inc.Inventor: Lex Kosowsky