Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

Abstract: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.

Abstract: In a method for producing nanoparticles of copper selenide, a flowable copper precursor is formed by combining a copper starting material and a ligand, and a flowable selenium precursor is formed by suspending a selenium starting material in a liquid. Then a flowable copper-selenium mixture including a lower-polarity solvent is formed by combining the flowable copper precursor and the flowable selenium precursor. The flowable copper-selenium mixture is conducted through at least one heating unit, and the nanoparticles of copper selenide are isolated in an oxygen-depleted environment. The isolation includes combining a solution containing the nanoparticles of copper selenide and a deoxygenated, higher-polarity solvent to precipitate the nanoparticles.

Abstract: Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The light source is configured to emit a primary light having a first peak wavelength. The LCD module includes a first sub-pixel having a phosphor film and a second sub-pixel having a non-phosphor film. The phosphor film is configured to receive a first portion of the primary light and to convert the first portion of the primary light to emit a secondary light having a second peak wavelength that is different from the first peak wavelength. The non-phosphor film is configured to receive a second portion of the primary light and to optically modify the second portion of the primary light to emit an optically modified primary light having a third peak wavelength that is different from the first and second peak wavelengths.

Abstract: Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method includes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.

Abstract: A dielectric ceramic composition including a first component and a second component. The first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %. The second component includes (by mass) at least (a) an oxide of Mn of 0.005% to 3.500% and (b) one or both of an oxide of Cu of 0.080% to 20.000% and an oxide of Ru of 0.300% to 45.000%.

Abstract: An object of the present invention is to provide a core/shell type quantum dot material capable of increasing the photoluminescence quantum yield and a method of manufacturing the same. The quantum dot material according to one embodiment of the present invention is a quantum dot material comprising a plurality of nanoscopic core-shell structures, each nanoscopic core-shell structure including a nanocrystalline core including phosphorus and indium, a shell disposed on the nanocrystalline core, and a modifier comprising at least one of chlorine and bromine, wherein the content of chlorine and/or bromine is within a range of 2 to 15 mass % of the quantum dot material.

Abstract: An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency and also high weather resistance. Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn, Se, S and a halogen, wherein the contents of P, Zn, Se, S and the halogen, in terms of molar ratio with respect to In, are as follows: 0.05 to 0.95 for P, 0.50 to 15.00 for Zn, 0.50 to 5.00 for Se, 0.10 to 15.00 for S, and 0.10 to 1.50 for the halogen.

Abstract: The present invention provides a silver paste containing at least a silver powder, a binder resin, and an organic solvent, wherein the silver powder contains a first silver powder having a D50 of 3.50 to 7.50 ?m and a second silver powder having a D50 of 0.80 to 2.00 ?m, where D50 represents a 50% value of a volume-based cumulative fraction obtained by laser diffraction particle size distribution measurement; a copper content of the whole silver powder is 10 to 5000 ppm by mass; a copper content of the second silver powder is 80 ppm by mass or more; and the first silver powder contains substantially no copper. The present invention provides a silver paste containing a powder in a high concentration and excellent in printability, and provides a silver conductor film that has a high filling factor, a high film density, high electrical conductivity, and excellent migration resistance.

Abstract: Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

Abstract: In a method for producing nanoparticles of copper selenide, a flowable copper precursor is formed by combining a copper starting material and a ligand, and a flowable selenium precursor is formed by suspending a selenium starting material in a liquid. Then a flowable copper-selenium mixture including a lower-polarity solvent is formed by combining the flowable copper precursor and the flowable selenium precursor. The flowable copper-selenium mixture is conducted through at least one heating unit, and the nanoparticles of copper selenide are isolated in an oxygen-depleted environment. The isolation includes combining a solution containing the nanoparticles of copper selenide and a deoxygenated, higher-polarity solvent to precipitate the nanoparticles.

Abstract: The purpose of the present invention to provide semiconductor nanoparticles substantially containing no Cd, and which have an increased absorption coefficient to blue light while maintaining high stability. Semiconductor nanoparticles having a core containing at least In and P, and a shell having one or more layers, wherein at least one layer of the shell is ZnSeTe (wherein Te/(Se+Te)=0.03 to 0.50); and the semiconductor nanoparticles cause, when the semiconductor nanoparticles are dispersed in a dispersion medium to yield a dispersion liquid with a concentration of 1 mg/mL in inorganic mass, the dispersion liquid to have an absorbance of 0.9 or higher with respect to light having a wavelength of 450 nm at an optical path length of 1 cm.

Abstract: An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

Abstract: A method for producing a metal powder provided on the surface thereof with a glassy thin film, wherein a glassy substance is produced in the vicinity of the surface of the metal powder by spray pyrolysis from a solution that contains a thermally decomposable metal compound and a glass precursor that produces a glassy substance that does not form a solid solution with the metal produced from the metal compound by thermal decomposition, so as to form the metal powder provided on the surface thereof with the glassy thin film. The metal includes a base metal as a major component, and the solution contains 5 to 30 mass %, as the mass % with reference to the overall solution, of a reducing agent that is soluble in the solution and exhibits a reducing activity during the aforementioned step of heating.

Abstract: A method for producing a metal powder provided on the surface thereof with a glassy thin film, wherein a glassy substance is produced in the vicinity of the surface of the metal powder by spray pyrolysis from a solution that contains a thermally decomposable metal compound and a glass precursor that produces a glassy substance that does not form a solid solution with the metal produced from the metal compound by thermal decomposition, so as to form the metal powder provided on the surface thereof with the glassy thin film. The glass precursor is prepared such that the melting temperature TmM of the metal and the liquid phase temperature TmG of the mixed oxide of the glassy substance satisfy the following formula (1): ?100 [° C.]?(TmM?TmG)?500 [° C.]??(1).

Abstract: A conductive paste comprising a conductive powder, a glass frit substantially free of lead, and an organic vehicle, wherein the glass frit contains 25 to 50 mol % B in terms of B2O3, 25 to 50 mol % Si in terms of SiO2, 7 to 23 mol % Al in terms of Al2O3, 2 to 15 mol % Mg in terms of MgO, 2 to 5 mol % Ba in terms of BaO, one or two selected from the group consisting of 3 to 18 mol % Zn in terms of ZnO, and 3 to 8 mol % Ti in terms of TiO2, based on the total number of moles in terms of the above oxides. According to the present invention, it is possible to provide a lead-free conductive paste having excellent resistance to dissolution in solder and acid resistance as well as being capable of forming fired films having excellent adherence and adhesion to a substrate.

Abstract: The purpose of the present invention to provide a wavelength conversion layer containing semiconductor nanoparticles substantially containing no Cd, and which have an increased absorption coefficient to blue light while maintaining high stability. A wavelength conversion layer containing semiconductor nanoparticles, wherein the wavelength conversion layer can convert light having a wavelength of 450 nm to light having a peak wavelength of 500 nm to 550 nm, or light having a peak wavelength of 600 nm to 660 nm; each of the semiconductor nanoparticles contained in the wavelength conversion layer has a core and a shell having one or more layers; the core contains In and P; and at least one layer of the shell is ZnXTe (wherein X represents Se or S, or both Se and S).

Abstract: According to the present invention, a dielectric ceramic composition, which can be fired in a reducing atmosphere, has a high dielectric constant, has an electrostatic capacity exhibiting little change, when used as a dielectric layer of a ceramic electronic component such as a laminated ceramic capacitor even under a condition of 150 to 200° C., and has small dielectric losses at 25° C. and 200° C., can be provided.

Abstract: Provided is a conductive paste for forming a solar cell electrode containing a glass frit component (A) as glass frit (II), the glass frit component (A) containing the following in the content ratio to the total molar number in terms of oxide: (a) 30 to 70 mol % of tellurium element, (b) 18 to 30 mol % of tungsten element, (c) 5 to 30 mol % of zinc element, (d) 1 to 15 mol % of boron element, (e) 0.3 to 5 mol % of aluminum element, (f) 0.3 to 7 mol % of one or more selected from rare earth elements in terms of oxide, and (g) 0.1 to 7 mol % of one or more selected from the group consisting of tin, lithium, and barium elements in terms of oxide. The conductive paste may have better electric characteristics and a small variation in the characteristics even at a relatively low firing temperature (for example, 760° C.).

Abstract: A method for producing metal oxide nanocrystals, according to the embodiment of the present invention, includes: continuously flowing, into a continuous flow path, one or a plurality of nanocrystal precursor solutions each comprising one or more nanocrystal precursors dissolved in a non-polar solvent; directing a segmenting gas into the continuous flow path to create a segmented reaction flow; flowing the segmented reaction flow into a thermal processor; heating the segmented reaction flow in the thermal processor to create a product flow; and collecting metal oxide nanocrystals from the product flow.