Patents Assigned to Shoulder Electronics Co., Ltd.
  • Patent number: 10998883
    Abstract: The present invention discloses a type of ultra-wide band SAW filter which comprises a first SAW resonator group and a second SAW resonator group that are connected to form a ladder structure. Each SAW resonator in the said first SAW resonator group has the same film thickness; each SAW resonator in the said second SAW resonator group has the same film thickness; the film thickness of each SAW resonator in the said first SAW resonator group is the same as or different from the film thickness of each SAW resonator in the said second SAW resonator group. The SAW filter according to the present invention can realize the pass-band non-parasitic mode response and is a high-performance ultra-wide band filter with a bandwidth of 6-20% of the center frequency and an insertion loss of less than 2 dB, and the present invention features small size, low cost and a broad application prospect in the field of military and civilian communications equipment.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: May 4, 2021
    Assignee: Shoulder Electronics Co., Ltd.
    Inventors: Weibiao Wang, Hongqing Mao, Peng Wei, Zengtian Lu, Zhuang Li, Zhaosu Sun
  • Publication number: 20190312569
    Abstract: The present invention discloses a type of ultra-wide band SAW filter which comprises a first SAW resonator group and a second SAW resonator group that are connected to form a ladder structure. Each SAW resonator in the said first SAW resonator group has the same film thickness; each SAW resonator in the said second SAW resonator group has the same film thickness; the film thickness of each SAW resonator in the said first SAW resonator group is the same as or different from the film thickness of each SAW resonator in the said second SAW resonator group. The SAW filter according to the present invention can realize the pass-band non-parasitic mode response and is a high-performance ultra-wide band filter with a bandwidth of 6-20% of the center frequency and an insertion loss of less than 2 dB, and the present invention features small size, low cost and a broad application prospect in the field of military and civilian communications equipment.
    Type: Application
    Filed: April 6, 2017
    Publication date: October 10, 2019
    Applicant: Shoulder Electronics Co., Ltd
    Inventors: Weibiao WANG, Hongqing MAO, Peng WEI, Zengtian LU, Zhuang LI, Zhaosu SUN
  • Patent number: 8957745
    Abstract: A superlattice crystal resonator having a substrate of a dielectric acoustic superlattice material, both sides of which substrate are plated with electrodes. The resonator can be a one-port resonator if the electrode on both sides is a single electrode, or it can be a two-port resonator if the electrode on one side is a single electrode and the electrode on the other side is a bipolar electrode. The superlattice crystal resonator can be used as a superlattice crystal filter, either in the form of a monolithic superlattice crystal filter formed by a two-port superlattice crystal filter, or in the form of a combined superlattice crystal filter where a number of one-port superlattice crystal resonators are interconnected in various circuitry configurations with or without other electronic components, such as capacitors, inductors, and resisters.
    Type: Grant
    Filed: June 13, 2010
    Date of Patent: February 17, 2015
    Assignee: Shoulder Electronics Co., Ltd.
    Inventors: Ping Liu, Yongyuan Zhu, Jingyu Wang
  • Patent number: 8232852
    Abstract: The present invention relates to an integrated dual-track surface-wave filter comprising two input interdigital transducers, an output interdigital transducer, and a shield stripe therebetween, which are integrated on a piezoelectric wafer. The integrated dual-track surface-wave filter is characterized in that the two input interdigital transducers share one output interdigital transducer and one comb-like electrode that has a bus bar arranged at the middle thereof, and in that main lobe regions of apodized envelope curves on the two parallel input interdigital transducers are staggered to be at cross overlapping positions, and in that the bus bar on the common comb-like electrode is segmented to connect respective fingers on the two input interdigital transducers. In this manner, the present invention effectively narrows the chip area occupied, consumes less substrate materials and decreases the volume of the encapsulated enclosure, thereby reducing the manufacture cost effectively.
    Type: Grant
    Filed: December 24, 2008
    Date of Patent: July 31, 2012
    Assignee: Shoulder Electronics Co., Ltd.
    Inventors: Shanlin Ni, Weibiao Wang