Patents Assigned to Showa Denka K.K.
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Patent number: 9478366Abstract: An electricity storage device including at least one electrode having one metal tab lead and plural electrode plates. The electrode plate includes a metal foil, an undercoat layer formed on one surface or both surfaces of the metal foil, and an active material layer formed on a surface of the undercoat layer. The undercoat layer includes a carbon material and the undercoat layer has a coating weight per unit area of one surface of 0.01 to 3 g/m2. A sum total thickness of the metal foils in the electrode plates is 0.2 to 2 mm. The electrode plates are welded to each other in a portion where the undercoat layer is formed and no active material layer is formed. Further, at least one of the electrode plates is welded to the metal tab lead in a portion where the undercoat layer is formed and no active material layer is formed.Type: GrantFiled: August 29, 2013Date of Patent: October 25, 2016Assignee: SHOWA DENKA K.K.Inventors: Hitoshi Yokouchi, Masahiro Ohmori, Masatoshi Kunisawa
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Patent number: 8080228Abstract: A graphite material is provided wherein D50% is 2 to 9 ?m in particle diameter distribution based on volume as measured by laser diffraction, a specific surface area is 2 to 6 m2/g and no coating layer is substantially included in a surface of the particle. Also provided is a graphite material comprising substantially single-composition particles having an isotropic crystal structure, wherein D50% is 2 to 9 ?m in particle diameter distribution based on volume as measured by laser diffraction, and a specific surface area is 2 to 6 m2/g.Type: GrantFiled: May 12, 2010Date of Patent: December 20, 2011Assignee: Showa Denka K.K.Inventors: Akinori Sudoh, Masataka Takeuchi
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Patent number: 7399994Abstract: A transparent electrode for use in a gallium nitride-based compound semiconductor light-emitting device having an emission wavelength of 440 nm or less, includes a metal layer disposed in contiguity to a p-type semiconductor layer and a current diffusion layer disposed on the metal layer. The transparent electrode contains substantially no Au in the whole region thereof. The metal layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component. The current diffusion layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component except for the case where the metal layer and the current diffusion layer have the same composition. It is possible to provide a white light-emitting device provided with the transparent electrode, a white light-emitting lamp using the white light-emitting device and a lighting fixture using the white light-emitting lamp.Type: GrantFiled: February 7, 2006Date of Patent: July 15, 2008Assignee: Showa Denka K.K.Inventors: Noritaka Muraki, Munetaka Watanabe, Yasushi Ohono, Hisayuki Miki
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Patent number: 7365366Abstract: A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive bType: GrantFiled: December 25, 2003Date of Patent: April 29, 2008Assignee: Showa Denka K.K.Inventor: Takashi Udagawa
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Patent number: 7012798Abstract: A capacitor having a tantalum or tantalum alloy electrode as one of the electrodes with an outgoing lead wire composed of a novel niobium alloy. According to the present invention, a capacitor having good heat resistance property can be inexpensively provided without reducing the capacitance.Type: GrantFiled: August 21, 2002Date of Patent: March 14, 2006Assignee: Showa Denka K.K.Inventors: Kazumi Naito, Kazuhiro Omori
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Patent number: 6955801Abstract: A step (1) of heating a fluoronickel compound to release a fluorine gas, a step (2) of allowing a fluorine gas to be occluded into a fluorinated compound, and a step (3) of heating the fluoronickel compound and reducing an inner pressure are conducted in a container, respectively, at least once, and thereafter a high-purity fluorine gas is obtained in the step (1). Also, a step (5) of heating a fluoronickel compound and reducing an inner pressure and a step (6) of allowing a fluorine gas reduced in a hydrogen fluoride content to be occluded into the fluoronickel compound are conducted in a container having a fluorinated layer formed on its surface, respectively, at least once, the step (5) is further conducted, and thereafter a fluorine gas containing impurity gases is contacted with the fluoronickel compound to fix and remove the fluorine gas, and the impurities are analyzed by gas chromatography.Type: GrantFiled: June 27, 2002Date of Patent: October 18, 2005Assignee: Showa Denka K.K.Inventors: Junichi Torisu, Hitoshi Atobe, Yasuyuki Hoshino
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Patent number: 6607578Abstract: A continuous vacuum refining method of molten metals, wherein impurities in the molten metal are eliminated by evaporation by stirring the molten metal (1) in the molten liquid stirring part B in the evacuated and pre-heated vacuum chamber, the molten liquid is transferred from the stirring part B to the tapping part C in the chamber through connecting holes, the molten liquid is continuously guided into the vessel in the refined molten liquid recovery chambers (10a), (10b) through the recovery passageways (8a), (8b) connected to the tapping part C, the recovery chamber being evacuated and connected with the passageway, and the refined molten liquid (9) is recovered after returning the pressure to the atmospheric pressure, wherein the molten liquid is discharged using plural passageways and plural recovery chambers connected with the respective passageways with alternating the recovery chamber. An apparatus employed for this method.Type: GrantFiled: November 21, 2001Date of Patent: August 19, 2003Assignees: Kobe Steel, Ltd., Showa Denka K.K., Sky Aluminum Co., Ltd., Nippon Light Metal Company, Ltd., The Furukawa Electric Co., Ltd, Mitsubishi Aluminum Co., Ltd.Inventors: Mitsuhiro Otaki, Kensuke Mori
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Patent number: 6504712Abstract: A heat sink for CPUs for use in personal computers comprises a radiating base plate of metal having on one surface thereof a flat portion for receiving the heat generated by the CPU, and a plurality of raised radiating fins integrally formed by cutting on the other surface of the radiating base plate. The heat sink can be provided with a greater number of radiating fins than a conventional heat sink of comparable base plate size, hence an increased radiating area is obtained.Type: GrantFiled: November 26, 2001Date of Patent: January 7, 2003Assignee: Showa Denka K.K.Inventors: Suzushi Hashimoto, Kazuo Kinaga, Shoji Akutsu
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Patent number: 5188956Abstract: A thermostable amylase having the following properties: (1) Action: acting on raw starch to produce mainly maltose and matotriose; (2) Optimum pH: about 6.0; (3) Stable pH: after incubation at a pH of 5 to 8 for one hour at 22.degree. C., the residual activity thereof is at least 95%; (4) Optimum temperature: 70.degree. C.; (5) Thermostability: the enzyme is not substantially inactivated by incubation at 60.degree. C. or 70.degree. C. for 15 minutes; and after incubation at 70.degree. C. for one hour, the residual activity thereof is at least 90%; (6) Molecular weight: 52,000.+-.Type: GrantFiled: November 21, 1990Date of Patent: February 23, 1993Assignee: Showa Denka K.K.Inventors: Takashi Nanmori, Ryu Shinke
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Patent number: 5000760Abstract: CBN abrasive grains contain 0.01% by weight or more of Si and, the majority of the surfaces of its grains consist of {111} planes. In the method for producing CBN abrasive grains, a C source, an Si source, and at least one member selected from the group consisting of alkali hydride, alkali-earth hydride, and a synthetizing catalyst of CBN which may be the alkali hydride and alkali-earth hydride, are mixed together with HBN and are subjected to the treatment.Type: GrantFiled: July 21, 1989Date of Patent: March 19, 1991Assignee: Showa Denka K.K.Inventors: Hirohiko Ohtsubo, Masakazu Maki, Eiichi Iizuka
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Patent number: 4879192Abstract: A secondary cell comprises opposed positive and negative electrodes of polymers, each having conjugated double bonds, such as polyacetylene, poly-phenylene, polythienylene and polypyrrole, and an electrolyte solution comprising an electrolyte dissolved in a nitrile compound and being interposed between the two electrodes.Type: GrantFiled: September 20, 1984Date of Patent: November 7, 1989Assignees: Hitachi Ltd., Showa Denka K.K.Inventors: Shigeoki Nishimura, Kazunori Fujita, Hiroyuki Sugimoto, Atsuko Tohyama, Noboru Ebato, Shinpei Matsuda
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Patent number: 4278820Abstract: A monoalkylene glycol monoether is produced with good efficiency and commercial advantage by reacting an alkylene oxide with an alcohol in the presence of a solid catalyst resulting from the exchange of exchangeable cations of a montmorillonite clay with a cation of Al, Cr, Mn, Fe, Sn or Th.Type: GrantFiled: October 3, 1979Date of Patent: July 14, 1981Assignee: Showa Denka K.K.Inventors: Norio Kametaka, Kuniomi Marumo, Tutomu Nozawa