Patents Assigned to Showa Denko HD Singapore Pte Ltd.
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Patent number: 9111566Abstract: A carbon film forming method including a step in which, inside a film formation chamber provided with a filamentous cathode electrode, an anode electrode disposed around the perimeter of the cathode electrode, and a substrate holder disposed at a position that is separated from the cathode electrode, a disk-like substrate that has a central aperture is disposed in the substrate holder so that one surface of the substrate is opposite the cathode electrode, and a columnar member that has a diameter equal to or greater than a diameter of the central aperture and that has a height equal to or greater than the diameter is disposed with clearance from the cathode electrode and the substrate so that its central axis is coaxial with a central axis of the substrate, one of its circular surfaces is oriented toward the cathode electrode, and its other circular surface is parallel to the one surface of the substrate; and a step in which carbon film is formed on the one surface of the substrate by causing emission of carbType: GrantFiled: May 21, 2010Date of Patent: August 18, 2015Assignee: Showa Denko HD Singapore Pte. Ltd.Inventor: Ichiro Ota
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Patent number: 9053732Abstract: A method of forming a perpendicular magnetic recording medium. The perpendicular magnetic recording medium comprises a substrate, an underlayer on the substrate, an intermediate layer on the underlayer and a recording layer on the intermediate layer. The underlayer comprises a first soft underlayer, an antiferromagnetically coupled Ru layer on the first soft underlayer, a second soft underlayer on the antiferromagnetically coupled Ru layer, and an orientation control layer on the second soft underlayer, the method comprises applying a negative bias voltage to the substrate during formation of the underlayer.Type: GrantFiled: January 6, 2012Date of Patent: June 9, 2015Assignee: Showa Denko HD Singapore Pte Ltd.Inventors: Amarendra Kumar Singh, Shun Matsumoto, Xiao Dong Chen, Hiroshi Kanazawa
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Publication number: 20140242419Abstract: There is provided a perpendicular recording medium comprising: a substrate with a seed layer formed thereon; a soft underlayer formed on the seed layer; an orientation control layer formed on the soft underlayer; an intermediate layer formed on the orientation control layer; a flash layer formed on the intermediate layer, the flash layer comprising an oxide; and a recording layer formed on the flash layer.Type: ApplicationFiled: February 24, 2014Publication date: August 28, 2014Applicant: SHOWA DENKO HD SINGAPORE PTE LTD.Inventors: Amarendra SINGH, Ben Beng Beng LIM, Hiroshi KANAZAWA, Voon Siang KHOANG
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Patent number: 8628866Abstract: A magnetic recording medium that is capable of realizing both high magnetic permeability and antiferromagnetic coupling for a soft magnetic underlayer. Namely, a magnetic recording medium including at least a non-magnetic substrate on which is laminated a soft magnetic underlayer formed by antiferromagnetic coupling of a plurality of soft magnetic layers, and a perpendicular magnetic layer for which the axis of easy magnetization is oriented mainly perpendicularly to the non-magnetic substrate, wherein the soft magnetic layers contain Fe as a first main component, Co as a second main component, and also contain Ta, the soft magnetic underlayer is antiferromagnetically coupled using the second peak or a subsequently appearing peak of the antiferromagnetic coupling force, which changes according to the thickness of a spacer layer sandwiched between the plurality of soft magnetic layers, and the magnetic permeability of the soft magnetic underlayer is not less than 1,000 H/m.Type: GrantFiled: December 1, 2009Date of Patent: January 14, 2014Assignee: Showa Denko HD Singapore Pte Ltd.Inventors: Amarendra K Singh, Daizo Endo, Voon Siang Khoang, Xiao Chen
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Publication number: 20120231298Abstract: A method of forming a perpendicular magnetic recording medium. The perpendicular magnetic recording medium comprises a substrate, an underlayer on the substrate, an intermediate layer on the underlayer and a recording layer on the intermediate layer. The underlayer comprises a first soft underlayer, an antiferromagnetically coupled Ru layer on the first soft underlayer, a second soft underlayer on the antiferromagnetically coupled Ru layer, and an orientation control layer on the second soft underlayer, the method comprises applying a negative bias voltage to the substrate during formation of the underlayer.Type: ApplicationFiled: January 6, 2012Publication date: September 13, 2012Applicant: SHOWA DENKO HD SINGAPORE PTE LTDInventors: Amarendra Kumar SINGH, Shun MATSUMOTO, Xiao Dong CHEN, Hiroshi KANAZAWA
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Publication number: 20120128895Abstract: A carbon film forming method including a step in which, inside a film formation chamber provided with a filamentous cathode electrode, an anode electrode disposed around the perimeter of the cathode electrode, and a substrate holder disposed at a position that is separated from the cathode electrode, a disk-like substrate that has a central aperture is disposed in the substrate holder so that one surface of the substrate is opposite the cathode electrode, and a columnar member that has a diameter equal to or greater than a diameter of the central aperture and that has a height equal to or greater than the diameter is disposed with clearance from the cathode electrode and the substrate so that its central axis is coaxial with a central axis of the substrate, one of its circular surfaces is oriented toward the cathode electrode, and its other circular surface is parallel to the one surface of the substrate; and a step in which carbon film is formed on the one surface of the substrate by causing emission of carbType: ApplicationFiled: May 21, 2010Publication date: May 24, 2012Applicant: SHOWA DENKO HD SINGAPORE PTE. LTD.Inventor: Ichiro Ota
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Publication number: 20110235211Abstract: A magnetic recording medium that is capable of realizing both high magnetic permeability and antiferromagnetic coupling for a soft magnetic underlayer. Namely, a magnetic recording medium including at least a non-magnetic substrate on which is laminated a soft magnetic underlayer formed by antiferromagnetic coupling of a plurality of soft magnetic layers, and a perpendicular magnetic layer for which the axis of easy magnetization is oriented mainly perpendicularly to the non-magnetic substrate, wherein the soft magnetic layers contain Fe as a first main component, Co as a second main component, and also contain Ta, the soft magnetic underlayer is antiferromagnetically coupled using the second peak or a subsequently appearing peak of the antiferromagnetic coupling force, which changes according to the thickness of a spacer layer sandwiched between the plurality of soft magnetic layers, and the magnetic permeability of the soft magnetic underlayer is not less than 1,000 H/m.Type: ApplicationFiled: December 1, 2009Publication date: September 29, 2011Applicant: SHOWA DENKO HD SINGAPORE PTE LTD.Inventors: Amarendra K Singh, Daizo Endo, V S Khoang, Xiao Chen
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Patent number: 7919334Abstract: Disclosed is a method to convert a low resistance cell in a MRAM device to a capacitive cell. The low resistance cell has a plurality of layers on a substrate. At least one layer remote from the substrate is sensitive to oxygen infusion. The method includes removing a cap layer of the cell and applying an oxygen barrier around the cell to expose at least a part of a surface of the at least one layer remote from the substrate. The at least one layer is oxidized. The oxygen barrier is removed.Type: GrantFiled: June 29, 2009Date of Patent: April 5, 2011Assignee: Showa Denko HD Singapore Pte Ltd.Inventor: Kor Seng Ang
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Publication number: 20100159286Abstract: Disclosed is a perpendicular magnetic recording medium on a substrate. The perpendicular magnetic recording medium has a recording layer. The recording layer includes a first granular recording layer and a second granular recording layer. There may be an exchange layer between the first granular recording layer and the second granular recording layer. Additionally or alternatively, the ratio of saturation magnetization of the first granular recording layer and the second granular recording layer may be greater than 1 and/or the first granular recording layer may have a relatively high magnetic anisotropy compared to the second granular recording layer magnetic anisotropy. A forming method is also disclosed.Type: ApplicationFiled: December 16, 2009Publication date: June 24, 2010Applicant: Showa Denko HD Singapore Pte Ltd.Inventors: Amarendra Kumar SINGH, Daizo Endo
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Publication number: 20100032780Abstract: Disclosed is a magnetoresistive random access memory (“MRAM”) device comprising a plurality of layers on a substrate. The plurality of layers comprises pinning layers, flipping layers, and at least one insulating layer between the pinning layers and the flipping layers. An eddy current side wall encapsulates at least the pinning layers of the plurality of layers. The eddy current side wall comprises a grain insulating layer for electrical insulation, and a magnetic barrier layer for magnetic isolation.Type: ApplicationFiled: July 20, 2009Publication date: February 11, 2010Applicant: Showa Denko HD Singapore Pte LtdInventor: Kor Seng ANG
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Publication number: 20100028563Abstract: The present invention provides a carbon film forming method capable of forming a dense carbon film with high hardness. The carbon film forming method includes: introducing a raw material gas G including carbon into a deposition chamber 101 whose internal pressure is reduced; ionizing the raw material gas G using a discharge between a filament-shaped cathode electrode 104 heated by electrical power and an anode electrode 105 provided around the cathode electrode; and accelerating and radiating the ionized gas to the surface of a substrate D. A magnetic field is applied by a permanent magnet 109 to increase the ion density of the ionized gas accelerated and radiated to the surface of the substrate D. In this way, it is possible to form a carbon film with high hardness and high density on the surface of the substrate D.Type: ApplicationFiled: July 20, 2009Publication date: February 4, 2010Applicant: Showa Denko HD Singapore Pte. Ltd.Inventor: Ichiro OTA
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Publication number: 20100003834Abstract: Disclosed is a method to convert a low resistance cell in a MRAM device to a capacitive cell. The low resistance cell has a plurality of layers on a substrate. At least one layer remote from the substrate is sensitive to oxygen infusion. The method includes removing a cap layer of the cell and applying an oxygen barrier around the cell to expose at least a part of a surface of the at least one layer remote from the substrate. The at least one layer is oxidized. The oxygen barrier is removed.Type: ApplicationFiled: June 29, 2009Publication date: January 7, 2010Applicant: Showa Denko HD Singapore Pte LtdInventor: Kor Seng ANG