Abstract: Provided is an aluminum alloy member for forming a fluoride film thereon, the fluoride film being excellent in smoothness without occurrence of a black dot-shaped bulged portion and excellent in corrosion resistance against corrosive gas and plasma, etc. The aluminum alloy member for forming a fluoride film thereon 1 for use in a semiconductor producing apparatus consists of Si: 0.3 mass % to 0.8 mass %; Mg: 0.5 mass % to 5.0 mass %; Fe: 0.05 mass % to 0.5 mass %; Cu: 0 mass % or more and 0.5 mass % or less; Mn: 0 mass % or more and 0.30 mass % or less; Cr: 0 mass % or more and 0.30 mass % or less 0.5 mass % or less; and the balance being Al and inevitable impurities. When an average major diameter of a Fe-based crystallized product in the aluminum alloy member is D (?m), and an average crystalline particle diameter in the aluminum alloy member is Y (?m), a relation expression of log10 Y?0.320D+4.60 is satisfied.

Abstract: Provided are an Al—Mg—Si based aluminum alloy forging excellent in mechanical properties in room temperature and hardly causing recrystallized grains and a production method thereof. An aluminum alloy forging consists of: Cu: 0.15 mass % to 1.0 mass %, Mg: 0.6 mass % to 1.15 mass %; Si: 0.95 mass % to 1.25 mass %; Mn: 0.4 mass % to 0.6 mass %; Fe: 0.2 mass % to 0.3 mass %; Cr: 0.11 mass % to 0.25 mass %; Ti: 0.012 mass % to 0.035 mass %; B: 0.0001 mass % to 0.03 mass %; Zn: 0.25 mass % or less; Zr: 0.05 mass % or less; and the balance being aluminum and inevitable impurities. The number of intermetallic compounds of Mg2Si with a minor axis of 0.5 ?m or more present in a visual field area of 1.5815 mm2 is 100 or less when a sectional structure of the aluminum alloy forging is observed at a magnification of 1,000 times.

Abstract: An aluminum alloy forging of the present invention includes 0.15 wt % to 1.0 wt % of Cu, 0.6 wt % to 1.3 wt % of Mg, 0.60 w t% to 1.45 wt % of Si, 0.03 wt % to 1.0 wt % of Mn, 0.2 wt % to 0.4 wt % of Fe, 0.03 wt % to 0.4 wt % of Cr, 0.012 wt % to 0.035 wt % of Ti, 0.0001 wt % to 0.03 wt % of B, 0.25 wt % or less of Zn, 0.05 wt % or less of Zr, the balance being Al and inevitable impurities. When integrated intensity of a diffraction peak of an AlFeMnSi phase in an X-ray diffraction pattern obtained by an X-ray diffraction measurement of a cross-section of the forging is “Q1” (cpd·deg) and integrated intensity of a diffraction peak of a (200) plane of an Al phase is “Q2” (cps·deg), a value of Q1/Q2 is 6×10?2 or less.

Abstract: Provided are an Al—Mg—Si based aluminum alloy forging excellent in mechanical properties in room temperature and hardly causing recrystallized grains and a production method thereof. An aluminum alloy forging consists of: Cu: 0.15 mass % to 1.0 mass %, Mg: 0.6 mass % to 1.15 mass %; Si: 0.95 mass % to 1.25 mass %; Mn: 0.4 mass % to 0.6 mass %; Fe: 0.2 mass % to 0.3 mass %; Cr: 0.11 mass % to 0.25 mass %; Ti: 0.012 mass % to 0.035 mass %; B: 0.0001 mass % to 0.03 mass %; Zn: 0.25 mass % or less; Zr: 0.05 mass % or less; and the balance being aluminum and inevitable impurities. The number of intermetallic compounds of Mg2Si with a minor axis of 0.5 ?m or more present in a visual field area of 1.5815 mm2 is 100 or less when a sectional structure of the aluminum alloy forging is observed at a magnification of 1,000 times.

Abstract: A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.

Abstract: A thermally conductive urethane resin composition comprising a castor oil-based polyol, a polyisocyanate compound, and a filler, wherein an equivalent ratio [NCO/OH] of isocyanato groups of the polyisocyanate compound to hydroxyl groups of the castor oil-based polyol is from 0.8 to 1.6, the filler comprises a filler (A) having an average particle diameter of 0.03 to 10 ?m, and the filler (A) has been surface-treated with a specific surface treatment agent.

Abstract: There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

Abstract: What is provided is a fluorine-containing ether compound represented by the following formula. R1—R2—O—CH2—R3—CH2—O—R4—R5 (R3 is a perfluoropolyether chain; R2 is represented by Formula (2), R4 is represented by Formula (3), R1 and R5 are hydrogen atoms or Formula (4); a and b in Formula (2) are an integer of 0 to 2, c in Formula (2) is an integer of 2 to 5, d and e in Formula (3) are an integer of 0 to 2, f in Formula (3) is an integer of 2 to 5; at least one of b in Formula (2) and e in Formula (3) is 1 or more; and k in Formula (4) is an integer of 3 to 6.

Abstract: A precursor of an alumina sintered compact including aluminum, yttrium, and at least one metal selected from iron, zinc, cobalt, manganese, copper, niobium, antimony, tungsten, silver, and gallium. The aluminum content is 98.0% by mass or more as an oxide (Al2O3) in 100% by mass of the precursor of an alumina sintered compact; the yttrium content is 0.01 to 1.35 parts by mass as an oxide (Y2O3) based on 100 parts by mass of the content of the aluminum as an oxide; the total content of the metals selected from the foregoing group is 0.02 to 1.55 parts by mass as an oxide based on 100 parts by mass of the content of aluminum as an oxide; and the aluminum is contained as ?-alumina. Also disclosed is an alumina sintered compact, and a method for producing an alumina sintered compact and for producing abrasive grains.

Abstract: The present invention relates to a method for bonding a metal and a resin, including bonding a metal and a resin by high-frequency induction welding via an intermediate resin layer which causes a chemical reaction.

Abstract: The invention is related to a nonaqueous secondary battery electrode having an electrode active material layer with little crack and high peel strength to a current collector, and can reduce the internal resistance of the battery; and an electrode slurry therefor, and a nonaqueous secondary battery. The electrode active material layer of the nonaqueous secondary battery contains an electrode active material (A), a copolymer (P), a nonionic surfactant (B), and a cellulose derivative (C). A content of the nonionic surfactant (B) to 100 parts by mass of the copolymer (P) is 5.0 to 350 parts by mass, and a content of the cellulose derivative (C) is 10 to 350 parts by mass. The copolymer (P) contains a structural unit (p1) derived from a (meth)acrylic acid salt of 50 to 99% by mass and a structural unit (p2) derived from a compound represented by general formula (1) of 0.50 to 30% by mass.

Abstract: There is provided a halon purification method capable of simply, safely, and efficiently removing mixed bromine molecules to obtain high purity halon. The halon purification method is a method for removing bromine molecules from crude halon containing halon and the bromine molecules, and the method includes: a contact step of bringing the crude halon into contact with an absorbing liquid containing an aqueous solution containing metal iodide to obtain a mixed liquid containing the crude halon and the absorbing liquid; and a separation step of separating the halon from the mixed liquid to obtain the halon and the absorbing liquid having absorbed the bromine molecules.

Abstract: Provided is a method for improving the yield of a harvested product of at least one plant selected from the group consisting of plants belonging to the families Solanaceae, Cucurbitaceae, Poaceae and Fabaceae. A method for cultivating at least one plant selected from the group consisting of plants belonging to the families Solanaceae, Cucurbitaceae, Poaceae and Fabaceae comprises applying a plant-vitalizing agent comprising an exogenous elicitor and an endogenous elicitor to a young seedling of the plant at least one time.

Abstract: A negative electrode material for lithium ion secondary batteries, including composite material particles containing nanosilicon particles having a 50% particle diameter (Dn50) of 5 to 100 nm in a number-based cumulative particle size distribution of primary particles, graphite particles and an amorphous carbon material; the composite material particles containing the nanosilicon particles at a content of 30 to 60 mass % or less, and the amorphous carbon material at a content of 30 to 60 mass % or less; the composite material particles having a 90% particle diameter (DV90) in the volume-based cumulative particle size distribution of 10.0 to 40.0 ?m, a BET specific surface area of 1.0 to 5.0 m2/g, and an exothermic peak temperature in DTA measurement of 830° C. to 950° C. Also disclosed is a paste for negative electrodes, a negative electrode sheet, a lithium ion secondary battery and a method for manufacturing the negative electrode material.

Abstract: A solid electrolyte material, a solid electrolyte, a method for producing these, and an all-solid-state battery. The solid electrolyte material includes a lithium ion conductive compound (a) including lithium, tantalum, phosphorus, and oxygen as constituent elements, and at least one compound (b) selected from a boron compound, a bismuth compound, and a phosphorus compound, wherein the compound (b) is a compound different from the compound (a).

Abstract: An etching method including an etching step of bringing, in the presence of plasma, an etching gas containing a fluorine compound with three or fewer carbon atoms having at least one bond of a carbon-oxygen double bond and an ether bond in a molecule into contact with a target etching member having an etching target and a non-etching target, and selectively etching the etching target in comparison with the non-etching target. A concentration of the fluorine compound in the etching gas is 0.5 vol% or more to 40 vol% or less, and the etching target has silicon nitride.

Abstract: A solid electrolyte material, a solid electrolyte, a method for producing the solid electrolyte, and an all-solid-state battery. The solid electrolyte material includes lithium, tantalum, phosphorus, and oxygen as constituent elements, and a temperature of an exothermic peak in a differential thermal analysis (DTA) curve of the solid electrolyte material is in the range of 500 to 850° C.

Abstract: A solid electrolyte material, a solid electrolyte, a method for producing the solid electrolyte, and an all-solid-state battery. The solid electrolyte material includes lithium, tantalum, phosphorus, and oxygen as constituent elements and includes at least one element selected from boron, niobium, silicon, and bismuth as a constituent element, and is amorphous.

Abstract: A method of producing an Al—Mg—Si-based aluminum alloy forged product, includes a solution heat treatment step of performing a solution heat treatment for heating the forged product obtained in the forging step at a temperature rising rate of 5.0° C./min or more from 20° C. to 500° C. and holding the forged product at 530° C. to 560° C. for 0.3 hours to 3 hours, a quench treatment step of quenching the forged product in a water tank by bringing an entire surface of the forged product into contact with quenching water within 5 seconds to 60 seconds after the solution heat treatment step for more than 5 minutes and not more than 40 minutes, and an aging treatment step of performing an aging treatment by heating the forged product after the quench treatment step at a temperature of 180° C. to 220° C. for 0.5 hours to 1.5 hours.