Abstract: An acyloxylation catalyst is obtained by loading (a) a first component containing at least one element of Groups 8, 9, 10 and 11 of the Periodic Table, (b) a second component containing an element which is at least one element of Groups 8, 9, 10 and 11 of the Periodic Table and which is different from the element of the first component, and (c) a third component containing an element which is a component that produces a precipitation-starting pH below the precipitation-starting pH of the first component and second component and which is different from the elements of the first component and second component, onto (d) a support. A catalyst is obtained that can be used to efficiently carry out acyloxylation for economical production of acyloxylated compounds.

Abstract: A backlight device (10) is provided with a strip-like light source (30) and a backlight frame (11). In the strip-like light source, a plurality of sub-mounts (40) are arranged in a row on a strip-like substrate having a short width and a long length. In the sub-mount, LEDs of each of red (R), green (G) and blue (B) or LEDs of RGGB are arranged as one unit. In the backlight frame, a plurality of strip-like light sources (30) are two-dimensionally arranged at intervals. The strip-like light sources (30) are arranged so that each position of the sub-mount (40) arranged on the strip-like light source (30) in a first row and each position of the sub-mount (40) arranged on the strip-like light source (30) in the adjacent second row are shifted in the longitudinal direction of the strip-like light source (30). Thus, a display device which has a remarkably reduced area of substrate having the light source rows and excellent uniformity of luminance and chromaticity is provided.

Abstract: A forging method for upsetting end portions of a raw material as diameter expansion scheduled portions includes: providing an upsetting apparatus having a fixing die, guides each having an insertion passage for inserting and holding an end portion of the raw material in a buckling preventing state, and punches each for axially pressing the end portion of the raw material inserted in and held by the insertion passage; inserting end portions of the raw material with the end portions protruded from the fixing die into the insertion passages; and moving the guides in direction opposite to moving direction of the punches such that length of exposed portion of the raw material becomes equal to or less than buckling limit length at cross-sectional area of the exposed portion of the raw material while simultaneously axially pressing the end portions of the raw material with the punches.

Abstract: A continuous casting member causes a final solidification portion to be displaced from a central portion of a cast member to reduce influence of cast defects that may be generated on a plastic worked article. In a continuous casting method for continuously manufacturing a cast member by driving a plurality of rotational molding members disposed to form a casting space, the plurality of rotational molding members are differentiated in temperature. A portion of one of the rotational molding members that starts to come into contact with molten metal can be set to a temperature of [(melting point or liquidus temperature of the metal)×0.35] or more, and the other of the rotational molding members can be cooled.

Abstract: The object of the present invention is to provide a method of manufacturing a Group-III nitride semiconductor light-emitting device that is highly productive and that enables production of a device having excellent light-emitting properties; a Group-III nitride semiconductor light-emitting device; and a lamp using the light emitting device.

Abstract: The present invention provides a magnetic recording medium that has sufficient recording/reproducing characteristics and good write characteristics and can correspond to high recording density, and a method of manufacturing the same. A magnetic recording medium 1 includes a plurality of magnetic recording patterns 2 that is magnetically separated from each other. Each of the magnetic recording patterns 2 includes a low-coercivity region 2a and a high-coercivity region 2b having a coercivity higher than the low-coercivity region, and the high-coercivity region 2b is arranged at the center of the low-coercivity region 2a in a plan view.

Abstract: A light emitting device which can emit light of an arbitrary color temperature and a process for producing a light emitting device which can emit light of an arbitrary color temperature are provided. Such a light emitting device includes a first light emitting diode device 2 and a second light emitting diode device 3 which are connected together in parallel, and a power-supply apparatus 4 which is capable of reversing polarity, in which the color temperature of the first light emitting diode device 2 is set to be higher than the color temperature of the second light emitting diode device 3.

Abstract: An oxynitride-based fluorescent material is formed of what results from substituting Eu for part of M of a general formula 2MO.Si3N4, wherein M denotes one or more elements selected from among Be, Mg, Ca, Sr and Ba. The oxynitride-based fluorescent material can be produced by a method comprising mixing an oxide of Be, Mg, Ca, Sr, Ba or Eu, or a compound of Be, Mg, Ca, Sr, Ba or Eu enabled by heating to form an oxide, and silicon nitride or a compound enabled by heating to form silicon nitride to obtain a mixture and firing the mixture in a vacuum or a non-oxidizing atmosphere at 1200 to 1900° C.

Abstract: It is an object of the present invention to provide a gallium nitride-based compound semiconductor light emitting device with high light emission output and low driving voltage. The gallium nitride-based compound semiconductor light emitting device of the present invention is a gallium nitride-based compound semiconductor light emitting device characterized by comprising an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, stacked in that order on a substrate, with a negative electrode and positive electrode provided on the n-type semiconductor layer and p-type semiconductor layer, respectively, the positive electrode being composed of a conductive transparent oxide material, wherein a layer containing a compound with a Ga—O bond and/or an N—O bond is present between the p-type semiconductor layer and positive electrode.

Abstract: An object of the present invention is to provide a light-emitting apparatus reduced in the optical self-absorption of the light-emitting device and assured of excellent light extraction efficiency. The inventive light-emitting apparatus comprises a substrate, a semiconductor light-emitting device provided on the substrate with or without intervention of a submount, and an encapsulating structure for encapsulating the semiconductor light-emitting device, wherein the encapsulating structure has a bottom parallel to the bottom of the semiconductor light-emitting device and the side surface of the encapsulating structure is tilted with respect to the bottom.

Abstract: A method for the fabrication of a Group III nitride semiconductor includes the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.

Abstract: A semifinished joint plate 60 has a refrigerant inlet portion 45 and a refrigerant outlet portion 46 spaced apart in the front-rear direction. The semifinished plate 60 has an upwardly or downwardly extending slit 61 formed between the inlet portion 45 and the outlet portion 46, and slit width adjusting portions 62, 63 extending through the thickness of the plate 60, having a larger width than the slit 61 and communicating respectively with the upper and lower ends of the slit 61. A portion of the semifinished plate 60 above the upper adjusting portion 62 and a portion thereof below the lower adjusting portion 63 are bent to shorten the plate.

Abstract: An oxynitride-based fluorescent material is formed of what results from substituting Eu for part of M of a general formula M3Si2N2O4, wherein M denotes one or more elements selected from among Be, Mg, Ca, Sr and Ba. The oxynitride-based fluorescent material can be produced by a method comprising mixing an oxide of Be, Mg, Ca, Sr, Ba or Eu, or a compound of Be, Mg, Ca, Sr, Ba or Eu enabled by heating to form an oxide, silicon nitride or a compound enabled by heating to form silicon nitride, and silicon oxide or a compound enabled by heating to form silicon oxide to obtain a mixture and firing the mixture in a vacuum or a non-oxidizing atmosphere at 1200 to 1900° C.

Abstract: An axial intermediate portion of raw material is held with a holding die in a state in which the intermediate portion is prevented from being enlarged in diameter. The axial end portions of the raw material is inserted in forming dented portions formed at axial end portions of the holding die. The scheduled diameter-enlarging portions are inserted in insertion passages formed in guides. Then, the scheduled diameter-enlarging portions are simultaneously pressed with punches to fill the material of the scheduled diameter-enlarging portions in corresponding forming dented portion while moving each guide in a direction opposite to a moving direction of each punch, thereby enlarging each scheduled diameter-enlarging portion.

Abstract: An electroconductive resin composition, comprising at least: a multi-component polymer-type resin binder (A) comprising a dispersed phase and a continuous phase, and having a number-average particle size of dispersed phase of 0.001-2 ?m, and an electroconductive material (B) in the form of powder and/or fiber. The electroconductive resin composition may preferably be used for a fuel cell separator.

Abstract: An electrode material comprising a particle containing at least one member selected from the particles containing silicon, tin, silicon compound and tin compound, and fibrous carbon. The particle includes: (1) a particle comprising at least one member of a silicon particle, tin particle, particle containing a lithium-ion-intercalatable/releasable silicon compound and particle containing a lithium-ion-intercalatable/releasable tin compound; or (2) a particle comprising a silicon and/or silicon compound-containing carbonaceous material deposited onto at least a portion of the surfaces of a carbon particle having a graphite structure. The lithium secondary battery using the electrode material as a negative electrode has high discharging capacity and is excellent in cycle characteristics and characteristics under a load of large current.

Abstract: A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied.

Abstract: A liquid-cooled-type cooling device includes a casing which has a cooling-liquid inlet formed at a rear end portion of the casing and a cooling-liquid outlet formed at a front end portion of the casing. A corrugated fin for forming a plurality of flow channels through which a cooling liquid flows from the rear side toward the front side is disposed within the casing to be located between the cooling-liquid inlet and the cooling-liquid outlet. A heat-generating-body mounting region is provided on an outer surface of a top wall of the casing. Projections which come into contact with front and rear end portions of the corrugated fin to thereby position the corrugated fin in the front-rear direction are provided on an inner surface of the bottom wall of the casing at positions shifted, in the left-right direction, from an inner surface region corresponding to the heat-generating-body mounting region.

Abstract: The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

Abstract: A method for manufacturing a magnetic recording medium includes the steps of depositing a magnetic layer on at least one of surfaces of a nonmagnetic substrate and injecting atoms partially in the magnetic layer, thereby demagnetizing parts having admitted the injected atoms or imparting amorphousness thereto, to form a magnetically separated magnetic recording pattern. The step of injecting includes the steps of applying resist to the at least one surface subsequent to the step of depositing, partially decreasing a thickness of the resist and irradiating a surface of the resist with atoms, thereby inducing partial injection of the atoms to the magnetic layer through portions of the resist decreased in thickness.