Abstract: In the present invention, in order to achieve a point contact, a thin film solar cell has a thin film light absorbing layer (3) disposed between a transparent conducive film (4) and a back-side metal electrode layer (2), and at the interface between the back-side metal electrode layer (2) and the light absorbing layer (3), the thin film solar cell is provided with a nanoparticle dispersion layer (5) including nanoparticles (6, 6 . . . ), where at least the surface of the nanoparticles is an insulator.

Abstract: A control device (200) calculates, on the basis of the transition of the expected amount of power generation of a power generation unit (160), the transition of the expected amount of power supply of a power supply unit (110), and the current amount of stored electrical power of a storage battery (120), a transition of the expected amount of the stored electrical power of the storage battery (120) in a case where electrical power continues to be supplied from a power distribution network (300) to the storage battery (120).

Abstract: A compound-based thin film solar cell which has a high photovoltaic conversion efficiency is obtained. The compound-based thin film solar cell is provided with substrate (1), back surface electrode layer (2) formed on substrate (1), p-type light absorption layer (3) formed on back surface electrode layer (2), n-type high resistance buffer layer (4) formed on p-type light absorption layer (3), and ZnO film (5) formed on n-type high resistance buffer layer (4), where n-type high resistance buffer layer (4) includes a first buffer layer (4A) formed on the p-type light absorption layer (3) and a second buffer layer (4B) formed on the first buffer layer (4A) and where the second buffer layer (4B) is formed by a material which has a lattice constant closer to the lattice constant of the ZnO film (5) than the first buffer layer (4A).

Abstract: A CZTS-based thin film solar cell which has a high photovoltaic conversion efficiency which is provided with a substrate, a metal back electrode layer which is formed on the substrate, a p-type CZTS-based light absorption layer which is formed on the metal back electrode layer, and an n-type transparent conductive film which is formed on the p-type CZTS-based light absorption layer and which has a dispersed layer of ZnS-based fine particles at the interface between the p-type CZTS-based light absorption layer and the metal back electrode layer.

Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.

Abstract: In the present invention, in order to achieve a point contact, a thin film solar cell has a thin film light absorbing layer (3) disposed between a transparent conducive film (4) and a back-side metal electrode layer (2), and at the interface between the back-side metal electrode layer (2) and the light absorbing layer (3), the thin film solar cell is provided with a nanoparticle dispersion layer (5) including nanoparticles (6, 6 . . . ), where at least the surface of the nanoparticles is an insulator.

Abstract: A thin film solar cell comprises a metal rear surface electrode layer formed on a substrate, a p-type CZTS light-absorbing layer formed on the electrode layer, an n-type high-resistance buffer layer containing a zinc compound as a material and formed on the p-type CZTS light-absorbing layer, and an n-type transparent electroconductive film formed on the n-type high-resistance buffer layer. When the Cu—Zn—Sn composition ratio (atom ratio) of the p-type CZTS light-absorbing layer is represented by coordinates with the Cu/(Zn+Sn) ratio shown on the horizontal axis and the Zn/Sn ratio shown on the vertical axis, the ratio is within the region formed by connecting point A (0.825, 1.108), point B (1.004, 0.905), point C (1.004, 1.108), point E (0.75, 1.6), and point D (0.65, 1.5), and the Zn/Sn ratio of the p-type CZTS light-absorbing layer surface in the n-type high-resistance buffer layer is 1.11 or less.

Abstract: This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500?·cm or higher.

Abstract: The solar cell module having a preferable edge space that prevents characteristics of a solar cell such as conversion efficiency from being deteriorated without making processes complicated is provided. In a method for manufacturing a solar cell module including a substrate glass, a first layer formed on the substrate glass and a second layer formed on the first layer, the method includes a step of forming a first edge space having a first width by removing the first layer and the second layer by the first width from an end part of the glass substrate and a step of forming a second edge space by removing only the second layer by a second width from the end part of the glass substrate, and the width of the second edge space is larger than the width of the first edge space.

Abstract: The solar cell module having a preferable edge space that prevents characteristics of a solar cell such as conversion efficiency from being deteriorated without making processes complicated is provided. In a method for manufacturing a solar cell module including a substrate glass, a first layer formed on the substrate glass and a second layer formed on the first layer, the method includes a step of forming a first edge space having a first width by removing the first layer and the second layer by the first width from an end part of the glass substrate and a step of forming a second edge space by removing only the second layer by a second width from the end part of the glass substrate, and the width of the second edge space is larger than the width of the first edge space.

Abstract: A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T1 for a time ?t1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T2 for a time ?t2. The temperature of the treatment object is then decreased to T3, and, at that temperature, the treatment object is held in a heated state for a time ?t3.

Abstract: The solar cell module having a preferable edge space that prevents characteristics of a solar cell such as conversion efficiency from being deteriorated without making processes complicated is provided. In a method for manufacturing a solar cell module including a substrate glass, a first layer formed on the substrate glass and a second layer formed on the first layer, the method includes a step of forming a first edge space having a first width by removing the first layer and the second layer by the first width from an end part of the glass substrate and a step of forming a second edge space by removing only the second layer by a second width from the end part of the glass substrate, and the width of the second edge space is larger than the width of the first edge space.

Abstract: In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Abstract: A control device (200) calculates, on the basis of the transition of the expected amount of power generation of a power generation unit (160), the transition of the expected amount of power supply of a power supply unit (110), and the current amount of stored electrical power of a storage battery (120), a transition of the expected amount of the stored electrical power of the storage battery (120) in a case where electrical power continues to be supplied from a power distribution network (300) to the storage battery (120).

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P1), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P1); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.

Abstract: Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate (1), a backside surface electrode layer (2) formed on the substrate (1), a p-type light-absorbing layer (3) formed on the backside surface electrode layer (2), and an n-type transparent conductive film (5) formed on the p-type light-absorbing layer (3). Voids (6) are formed at the interface of the backside surface electrode layer (2) and the p-type light-absorbing layer (3).

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: The property of CIS based thin-film solar cell modules that the modules recover their conversion efficiency, etc. upon irradiation with a weak light is correctly evaluated. A CIS based thin-film solar cell module is subjected to a conventional damp heat test with a constant-light solar simulator (solar simulator) 1D in such a manner that the power of the light source 1E is regulated so that the solar simulator 1D emits a weak light corresponding to the amount of solar radiation in cloudy weather, i.e., resulting in an irradiance of 100-300 W/m2, and the module is continuously irradiated with the weak light throughout the test period under the same temperature, humidity, and storage period conditions as those in the conventional conditions for the test (1,000-hour storage in the dark at a temperature of 85° C. and a relative humidity of 85%).

Abstract: In order to provide a CIS-based thin film solar cell having high photoelectric conversion efficiency, this CIS-based thin film solar cell is laminated in order of a high distortion point glass substrate (1), an alkali control layer (2), a back electrode layer (3), a p-type CIS-based light absorbing layer (4), and an n-type transparent conductive film (6), wherein said alkali control layer (2) is a silica film whose film thickness is within a range of 2.00-10.00 nm and whose refractive index is within a range of 1.450-1.500.