Abstract: A thin film photoelectric conversion device for performing photoelectric conversion of a wide range of light, from the visible range to the infrared range, is provided.

Abstract: A photovoltaic structure having a semiconductor substrate, and metal particles bonded to the semiconductor substrate. The photovoltaic structure is sufficiently thin to be translucent or semitransparent. The metal particles are produced when a layer of metal is deposited onto the semiconductor substrate and heated. The photovoltaic structure is capable of causing generation of an electrical current upon exposure to electromagnetic radiation within one or more of the infrared spectrum, the visible light spectrum, or the ultraviolet spectrum.

Abstract: A thin film photoelectric conversion device for performing photoelectric conversion of a wide range of light, from the visible range to the infrared range, is provided.

Abstract: Provided are a thin-film photoelectric conversion device of which thickness can be reduced to several tens nanometers (nm) or below, and a method of manufacturing the thin-film photoelectric conversion device. The thin-film photoelectric conversion device includes a metal silicide layer formed on a surface of a silicon substrate by diffusion of a first metal and silicon, a conductive thin-film layer formed on the surface of the silicon substrate in a region where the second metal thin-film layer is laminated, and a silicon diffused portion formed between the metal silicide layer and the conductive thin-film layer near the surface of the silicon substrate by diffusion of silicon nano-particles.