Abstract: An apparatus integrated with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon sensor to measure air flow velocity on targeting correction for projectiles arms is disclosed in the present invention. The air flow velocity component perpendicular to the travel direction of bullets with respect to projectile arm body (e.g. bullets, shells, or arrows) has main effect to the targeting accuracy. Such effect is pretty much determined by the wind speed and the projectile travel distance. The integration with MEMS mass flow sensor has made the invented apparatus possible to be compact, low power consumption, low cost and high accuracy. The low power consumption characteristic of MEMS mass flow sensor is especially crucial for making the apparatus of present invention feasible by battery operated.

Abstract: With increasing demands on data communication and remote control in current industrial processes or gas measurement applications, development of new technologies would be necessary. The current invention presents a MEMS mass flow meter that are cost compatible with conventional variable area flow meters while providing all digital data process including accumulated flow rate measurements, user programmable flow rate alarm and flow data storage. These in-line meters provide packages in pipe diameter from 4 mm up to 100 mm. It is powered with battery and can be used as a stand-alone hand-held option. The meter is also equipped with the industrial standard RS485 Modbus communication interface for easy network and remote management.

Abstract: Many current micromachining devices are integrated with materials such as very thick layer of polyimide (10 to 100 um) to offer essential characteristics and properties for various applications; it is inherently difficult and complicated to provide reliable metal interconnections between different levels of the circuits. The present invention is generally related to a novel micromachining process and structure to form metal interconnections in integrated circuits or micromachining devices which are incorporated with thick polyimide films. More particularly, the embodiments of the current invention relates to formation of multi-step staircase structure with tapered angle on polyimide layer, which is therefore capable of offering superb and reliable step coverage for metallization among different levels of integrated circuits, and especially for very thick polyimide layer applications.

Abstract: The present invention is generally related to a novel micromachining thermal mass flow sensor and, more particularly, to a device incorporated with high strength and robust characteristics, which therefore is capable of operating under harsh environments. The new disclosed sensor is made of essential material which can provide robust physical structure and superior thermal properties to support the flow measuring operation. The invented thermal mass flow sensor is featuring with the advantages of micro-fabricated devices in terms of compact size, low power consumption, high accuracy and repeatability, wide dynamic range and easiness for mass production, which could avoid the drawbacks of fragility and vulnerability.

Abstract: An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed.