Abstract: A planar antenna comprising a planarly configured inner radiation element that is surrounded by an outer radiation element, wherein the inner and outer radiation elements each have a feed point. A continuous or discontinuous modification of the distance, which is equal in relation to a symmetrical axis of the inner radiation element, exists between the inner radiation element and the outer radiation element. The distance between the outer and the inner radiation element is different in the area of the two feed points from that in the area facing away from the feed points.

Abstract: A method for improving the planarization of a BPSG layer over a semiconductor substrate, where the substrate contains underlying structures, is disclosed. The method comprises the steps of: forming a first borophosphosilicate glass (BPSG) layer over and between the underlying structures; reflowing the first BPSG layer using a thermal process; performing a chemical mechanical polishing (CMP) step on the first BPSG layer; forming a second BPSG layer over the first BPSG layer; and reflowing the second BPSG layer using a thermal process.

Abstract: In a semiconductor test equipment, in which test probes are placed into contact with bonding pads of semiconductor chips on a semiconductor wafer, an adjustment tool for adjusting the position of the test probes is disclosed. The adjustment tool comprises a cylindrical base portion, a triangular intermediate portion, and a flat, rectangular tip portion. The tool is preferably formed of used test probes comprised of tungsten. The tool is plated with a titanium nitride layer to increase the life of the tool.