Abstract: An arrangement of enhanced drivability transistors is disclosed herein which includes a plurality of conductor patterns, wherein the conductor patterns include ring-shaped portions which enclose device diffusion contacts and the ring-shaped portions form the gate conductors of insulated gate field effect transistors (IGFETs).
Type:
Grant
Filed:
August 25, 1998
Date of Patent:
May 22, 2001
Assignees:
International Business Machines Corporation, Siemens Microelectronics, Inc., Siemens Aktiengebellschaft, Siemens Dram Semiconductor Corporation, SMI Holding LLC, Infereon Technologies Corporation Intellectual Property
Department