Patents Assigned to Siemens and Shell Solar GmbH
  • Patent number: 6650031
    Abstract: The invention relates to a system for protecting a solar module against theft or unauthorized use by an authorized consumer. Said system comprises an interruption device on the solar module side and a release device on the consumer side. The interruption device transmits a first signal to the release device via a power line and interrupts the transfer, via a power line, of energy generated by the solar module to the consumer if the interruption device does not receive, via said power line, a second signal from the release device within a specified first period. This permits the secure and economical protection of the solar module, since a solar module protected in the manner described above is of no value without the second signal.
    Type: Grant
    Filed: July 5, 2001
    Date of Patent: November 18, 2003
    Assignee: Siemens and Shell Solar GmbH
    Inventor: Daniel Goldack
  • Patent number: 6576866
    Abstract: The invention relates to a method for structuring transparent, conductive layers, especially for structuring transparent electrode layers in thin-layer components. The selected wavelength (&lgr;) of the laser used for structuring should fall substantially within the plasma absorption range of the transparent electrode layer and should fulfill following three requirements: a) the wavelength &lgr; of the laser must be greater than the cut-off wavelength &lgr;gopt for optical absorption in the base absorber, b) the wavelength &lgr; of the laser must be greater than the cut-off wavelength for free substrate absorption (plasma absorption) &lgr;gpla in the transparent electrode layer, and c) the wavelength &lgr; of the laser must be less than the cut-off wavelength for metallic reflection &lgr;gmet on the transparent front electrode.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: June 10, 2003
    Assignee: Siemens and Shell Solar GmbH
    Inventor: Franz Karg
  • Patent number: 6566628
    Abstract: A method and device for thin-film ablation of a substrate of a workpiece, more particularly, for surface layer ablation of a thin-film solar cell. The device comprises a laser resonator for generating a light pulse machining beam having pulse durations smaller than 100 ns and a pulse energy density between 0.1 and 10 J/cm2, and a controllable positioner for positioning the workpiece relative to the machining beam such that an amount of energy impinging the surface to be machined is substantially constant for each unit of surface area. The device further includes an optical system arranged in a path of the machining beam, including an optical fiber cable and an optical imaging member for imaging an output of the optical fiber cable on a surface of the workpiece, the optical system being configured such that, in a plane of the surface to be machined, the power distribution is substantially homogenous.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: May 20, 2003
    Assignee: Siemens and Shell Solar GmbH
    Inventors: Helmut Vogt, Franz Karg
  • Patent number: 6486391
    Abstract: The invention relates to a diode structure, especially for thin film solar cells. The aim of the invention is to provide a diode structure for thin film solar cells. Said structure allows for an assembly of a thin film solar cell, whereby said assembly is as flexible as possible, efficiency is high, and utilizing materials that are as environmentally friendly as possible. A diode structure comprising a p-conducting layer, which consists of a chalcopyrite compound, and a n-conducting layer, which is adjacent to the p-conducting layer and consists of a compound that contains titanium and oxygen, is provided.
    Type: Grant
    Filed: July 25, 2001
    Date of Patent: November 26, 2002
    Assignee: Siemens and Shell Solar GmbH
    Inventor: Franz Karg
  • Patent number: 6448105
    Abstract: A method for doping one side of a semiconductor substrate, such as in a silicon wafer, wherein an oxide layer is deposited on both the side to be doped and the non-doped side of the semiconductor substrate. A doping layer, containing a doping agent, is deposited onto the oxide layer on the side to be doped. The doping agent passes through the oxide layer on the side to be doped and into the semiconductor substrate. The oxide layer on the non-doped side serves as a protective layer, preventing diffusion of the doping agent into the undoped side of the substrate.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: September 10, 2002
    Assignee: Siemens and Shell Solar GmbH
    Inventor: Steffen Sterk