Patents Assigned to Siemens Dram Semiconductor Corporation
  • Patent number: 6236258
    Abstract: An arrangement of enhanced drivability transistors is disclosed herein which includes a plurality of conductor patterns, wherein the conductor patterns include ring-shaped portions which enclose device diffusion contacts and the ring-shaped portions form the gate conductors of insulated gate field effect transistors (IGFETs).
    Type: Grant
    Filed: August 25, 1998
    Date of Patent: May 22, 2001
    Assignees: International Business Machines Corporation, Siemens Microelectronics, Inc., Siemens Aktiengebellschaft, Siemens Dram Semiconductor Corporation, SMI Holding LLC, Infereon Technologies Corporation Intellectual Property Department
    Inventors: Heinz Hoenigschmid, Dmitry Netis