Patents Assigned to Siemens Inofmraton and Communication Networks S.p.A.
  • Microwave voltage controlled oscillator formed and located on a high dielectric loss substrate with a controlled circuit
    Patent number: 6326857
    Abstract: A voltage controlled oscillator formed as a first layout with metallized areas by a planar technique is located on a high dielectric loss substrate. A second layout formed of metallized area for control circuits of the voltage controlled oscillator is formed on a high loss dielectric substrate is also formed by the same technique as the first layout. A ground plane for the controlling oscillator is formed on an opposite side of the dielectric substrate on which the voltage controlled oscillator is formed.
    Type: Grant
    Filed: February 10, 2000
    Date of Patent: December 4, 2001
    Assignee: Siemens Inofmraton and Communication Networks S.p.A.
    Inventors: Carlo Buoli, Giovanni Mora