Patents Assigned to Siemens Microelectronics
  • Capacitor trench-top dielectric for self-aligned device isolation
    Patent number: 6184107
    Abstract: A semiconductor device including a substrate. At least one pair of deep trenches is arranged in the substrate. A collar lines at least a portion of a wall of each deep trench. A deep trench fill fills each deep trench. A buried strap extends completely across each deep trench over each deep trench fill and each collar. An isolation region is arranged between the deep trenches. A dielectric region overlies each buried strap in each deep trench.
    Type: Grant
    Filed: March 17, 1999
    Date of Patent: February 6, 2001
    Assignees: International Business Machines Corp., Siemens Microelectronics
    Inventors: Rama Divakaruni, Ulrike Gruening, Byeong Y. Kim, Jack A. Mandelman, Larry Nesbit, Carl J. Radens