Abstract: Methods and devices of converting signals of consumer electronics connection protocols to high speed bi-directional signals are presented. A novel packing method packs all the data, clocks, and control signals into one or more packets of a predefined format. A novel unpacking method unpacks the packets to original data, clocks, and control signals.
Type:
Grant
Filed:
May 11, 2012
Date of Patent:
May 6, 2014
Assignee:
SiFotonics Technologies Co, Ltd.
Inventors:
Bo Peng, Zhong Yu, Jack Yuan, Chunmei Li, Dong Pan
Abstract: Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.
Abstract: Various embodiments of a method and device for dark current cancellation for optical power monitoring in optical transceivers are presented. In one aspect, a device includes a photosensitive module and a processing module coupled to the photosensitive module. The photosensitive module is configured to detect an optical signal and generate a first signal responsive to detecting the optical signal. The processing module is configured to determine a value of a second signal that is related to noise and determine a value of a third signal that is related to a difference between a value of the first signal and the value of the second signal.
Type:
Application
Filed:
May 3, 2013
Publication date:
November 7, 2013
Applicant:
SiFotonics Technologies Co., Ltd.
Inventors:
Pengfei Cai, Mengyuan Huang, Tielong Xu, Dong Pan
Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge)-containing absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge-containing absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge-containing absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge-containing absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge-containing absorption layer to decrease the dark currents in APDs.
Abstract: Various embodiments of a hybrid multichannel or WDM integrated transceiver are presented. In one aspect, a transceiver includes a transmitter portion and a receiver portion. The transmitter portion includes an optical waveguide structure that includes multiple channels of optical waveguide modulators on a substrate. The receiver portion includes at least one surface light illuminated photodetector.
Abstract: Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.
Abstract: Methods and devices of converting signals of consumer electronics connection protocols to high speed bi-directional signals are presented. A novel packing method packs all the data, clocks, and control signals into one or more packets of a predefined format. A novel unpacking method unpacks the packets to original data, clocks, and control signals.
Type:
Application
Filed:
May 11, 2012
Publication date:
November 15, 2012
Applicant:
SIFOTONICS TECHNOLOGIES CO., LTD
Inventors:
Bo Peng, Zhong Yu, Jack Yuan, Chunmei Li, Dong Pan
Abstract: A low-cost monolithic optical module for splitting one or more input optical beams to two or more output optical beams is provided. The one or more input optical beams are reflected by two or more total internal reflection (TIR) surfaces of the monolithic optical module. A light splitting ratio between the two or more output optical beams is predetermined by one or more physical features of the two or more TIR surfaces.
Type:
Application
Filed:
June 19, 2012
Publication date:
October 18, 2012
Applicant:
SIFOTONICS TECHNOLOGIES CO., LTD.
Inventors:
Shipeng Yan, Yanwu Zhang, Dong Pan, Jack Yuan
Abstract: In one aspect, an optical device comprises a monolithic optical module which includes a first total internal reflection (TIR) surface, a second TIR surface adjacent the first TIR surface, and a first optical port aligned with the first internal optical beam dividing interface. An interface between the first TIR surface and the second TIR surface forms a first internal optical beam dividing interface. An exterior surface of the first TIR surface and an exterior surface of the second TIR surface form a generally V-shaped notch on the monolithic optical module. A first optical beam entering the monolithic optical module through the first optical port and incident on the first internal optical beam dividing interface is partially reflected by the first TIR surface to travel in a first direction as a second optical beam and partially reflected by the second TIR surface to travel in a second direction as a third optical beam. The second direction is generally opposite to the first direction.