Abstract: A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.

Abstract: A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.

Abstract: A dual band amplifier is provided comprising a first matching circuit disposed in a first radiofrequency path between an input port and a first amplifier and a second matching circuit disposed in a second radiofrequency path between the input port and a second amplifier. The first matching circuit transforms a first input impedance of the first amplifier to a predetermined input port impedance when the radiofrequency signal is in a first frequency range and transmits the first input impedance to the input port when the radiofrequency signal is in the second frequency range. The second matching circuit transforms the second input impedance to the input port impedance when the input signal is in the second frequency range and transmits the second input impedance to the input port when the radiofrequency signal is in the first frequency range.

Abstract: A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.

Abstract: A circuit and method are provided for detecting a power of a signal amplified in a power amplifier. A diode and a voltage bias source are used to shift a voltage of the signal taken at a base of an amplifying transistor of the power amplifier, to generate a positive signal. The positive signal is provided to a base input of an emitter follower exhibiting high input impedance to generate a power detector output which follows the positive signal.

Abstract: A dual band amplifier is provided comprising a first matching circuit disposed in a first radiofrequency path between an input port and a first amplifier and a second matching circuit disposed in a second radiofrequency path between the input port and a second amplifier. The first matching circuit transforms a first input impedance of the first amplifier to a predetermined input port impedance when the radiofrequency signal is in a first frequency range and transmits the first input impedance to the input port when the radiofrequency signal is in the second frequency range. The second matching circuit transforms the second input impedance to the input port impedance when the input signal is in the second frequency range and transmits the second input impedance to the input port when the radiofrequency signal is in the first frequency range.

Abstract: A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.

Abstract: A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.

Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.

Abstract: A circuit is disclosed with an external coupling port for coupling to an external antenna, for example. The circuit has an FDD receive path including a narrowband passband filter. The circuit has a TDD receive path bypassing the narrowband passband filter but relying on a same amplifier. The circuit also has an FDD transmit path including a narrowband passband filter. The circuit has a TDD transmit path bypassing the narrowband passband filter of the FDD transmit path but relying on a same transmit amplifier. A switching configuration allows the circuit to operate in TDD mode, alternating between the TDD receive path and the TDD transmit path and in the FDD mode wherein the FDD transmit and receive paths are simultaneously coupled to the external coupling port.

Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.

Abstract: A circuit and method are provided for detecting a power of a signal amplified in a power amplifier. A diode and a voltage bias source are used to shift a voltage of the signal taken at a base of an amplifying transistor of the power amplifier, to generate a positive signal. The positive signal is provided to a base input of an emitter follower exhibiting high input impedance to generate a power detector output which follows the positive signal.

Abstract: A circuit and method are provided for reducing dynamic EVM of a power amplifier (PA) used for RF communication. A temperature dependent boost bias signal is applied to the bias input port of amplifier circuitry of the PA in dependence upon a temperature of the amplifier circuitry to compensate for transience in the gain or phase response of the PA while components of the PA is differentially warming-up, advantageously taking into account an actual temperature of the amplifier circuitry.

Abstract: A circuit and method are provided for reducing dynamic EVM of a power amplifier (PA) used for RF communication. A temperature dependent boost bias signal is applied to the bias input port of amplifier circuitry of the PA in dependence upon a temperature of the amplifier circuitry to compensate for transience in the gain or phase response of the PA while components of the PA is differentially warming-up, advantageously taking into account an actual temperature of the amplifier circuitry.

Abstract: A bias control circuit is provided comprising an input port for receiving a signal indicative of an amplitude of a supply voltage provided to a multi stage power amplifier circuit. Electronic circuitry, electrically coupled to the input port, generates a bias control signal in dependence upon the signal indicative of a supply voltage for provision to a first stage power amplifier of the multi stage power amplifier circuit. The bias control signal is generated such that a gain change of the multi stage power amplifier circuit due to a supply voltage change is substantially compensated.

Abstract: A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.

Abstract: A method is disclosed wherein a power level indicating a level of transmission power from an amplifier is provided. An indication of at least one of channel, channel bandwidth, OOB spectral requirements, spectral mask requirements, EVM, modulation rate, and modulation type is also provided. A control signal for controlling one of a bias current provided to the amplifier and a matching circuit for matching an output port of at least a stage of the amplifier is generated, the control signal determined in dependence upon the power level and the at least an indication. Then the one of the bias current and the matching circuit is adjusted in accordance with the control signal.

Abstract: A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complimentary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output port is also provided.

Abstract: Embodiments of the invention involve providing assistance data to a global position and navigation receiver, for example topographical data, such that the receiver can decide on a specific action depending on that data. The topographical data may include one or both of geographical data and architectural data. Geographical data may include information about natural formations, such as hills, valleys, forests, etc. Architectural data may include manmade formations, such as streets, buildings, bridges, etc. The receiver may then interpret and decide on a course of action for controlling the receiver base on the assistance data.

Abstract: An integrated RF circuit is disclosed having an RF input port and an RF output port. The RF output port is for being coupled with a known impedance to an external circuit element such as an antenna. At least an RF circuit element is disposed along a propagation path between the RF input port and the RF output port. The RF circuit element has a first input port and a first output port and is for affecting a signal received at the first input port and providing the affected signal to the first output port. The integrated RF circuit also has a VSWR detector circuit for measuring a ratio of a characteristic of RF signals at the first input port and a same characteristic of the RF signals at the first output port and for providing an indication of the ratio at a VSWR output port. The measured ratio of the characteristic is affected by an impedance of the coupling thereby providing an indication relating to the coupling.