Abstract: In order to achieve electromagnetic and/or thermal isolation between components in close proximity to each other on a common module substrate, an alternate package and method for manufacturing the package is provided. Inventive methods utilize a grounded, metal-coated overmold for a IC module package that can provide an alternate thermal path to heat sink high power components generating excess heat energy and/or provide general electromagnetic shielding and isolation between two integrated circuits in very close proximity that are susceptible to electromagnetic interference. A dielectric layer conformably covers semiconductor dies mounted on a substrate. On some semiconductor dies, a portion of the dielectric layer is removed from the back surface of the semiconductor dies to allow direct contact between the exposed back surface of the dies and a metallization layer forming part of the overmold. This direct contact allows heat energy to be drawn away from the dies.

Abstract: An amplifier is disclosed for providing processing of a variable RF signal, the amplifier comprising a first parallel gain stage and a plurality of second parallel gain stages electrically disposed between an input fixed impedance matching circuit and an output fixed impedance matching circuit. Wherein in operation each of the first parallel gain stage and plurality of second parallel gain stages are for processing the variable RF signal according to at least a characteristic of the RF power or frequency range. Each of the plurality of second parallel gain stages comprising a tunable impedance matching circuit such that when the second parallel gain stage is in operation the tunable impedance matching circuit providing a transformation of impedance to match between the second amplifier and output fixed matching circuit within the frequency range, and other than providing a match within the frequency range when not in operation.

Abstract: An amplifier is disclosed for providing processing of a variable RF signal, the amplifier comprising a first parallel gain stage and a plurality of second parallel gain stages electrically disposed between an input fixed impedance matching circuit and an output fixed impedance matching circuit. Wherein in operation each of the first parallel gain stage and plurality of second parallel gain stages are for processing the variable RF signal according to at least a characteristic of the RF power or frequency range. Each of the plurality of second parallel gain stages comprising a tunable impedance matching circuit such that when the second parallel gain stage is in operation the tunable impedance matching circuit providing a transformation of impedance to match between the second amplifier and output fixed matching circuit within the frequency range, and other than providing a match within the frequency range when not in operation.

Abstract: A low voltage wide ratio current mirror circuit comprises an n times current mirror having an input port for receiving an input current and an m times current mirror coupled in series to the n times current mirror for resulting in an output current of (N*M the input current) being provided to a load where at least one of N and M is other than 1. The circuit provides precision in output current for use with a low voltage power amplifier without incurring an overhead of quiescent current. The low voltage wide ratio current mirror circuit in accordance with a second embodiment of the invention includes a voltage swing reduction circuit in order to provide increased stability thereto. In additional embodiments of the invention, the load is a differential amplification stage for providing differential amplification to differential RF input signals received at first and second RF input ports thereof.

Abstract: A low dropout (LDO) PFET regulator circuit is disclosed for operating in two modes of operation. For higher supply voltage potentials the LDO PFET regulator circuit operates normally, as supply voltage potential drops, the LDO PFET regulator operates in a second mode of operation where a decision circuit determines whether to supply a first boost current thereto in order to compensate for the reduced transimpedance of the first PFET.

Abstract: A novel method and apparatus is disclosed for reducing power dissipation of RF power amplifiers when a reduced output power level is required. The mechanism has the specific purpose of optimizing the collector terminal voltage on portions of the amplifier's RF chain for maintaining linearity while minimizing power consumption. The apparatus permits a smaller DC to DC converter to be used than in prior art, such that it is implemented in the same semiconductor die or module. Furthermore, the invention eliminates the amplification and phase continuity issues that arise from switched state power amplifiers and envelope-following approaches.

Abstract: A power amplifier (PA) circuit is disclosed that comprises a PA output stage having a first amplifying portion having a first gain portion and disposed in parallel with a second amplifying portion having a second gain portion, the PA output stage having an output stage gain, an input port for receiving of a RF input signal. A second RF power detector is provided for detecting a signal power of the RF input signal and for providing a second detected signal. An at least a biasing circuit is provided for biasing the first amplifying portion and the second amplifying portion in dependence upon the second detected signal for amplifying the RF input signal such that for the output stage gain the ratio between the first gain portion and the second gain portion varies in dependence upon the second detected signal.