Abstract: A method and a system for measurement the geometrical parameters of ultra thin wafers with the thickness less than 200 microns. The measurement system comprises two measurement channels and a computer. Each measurement channel comprises a motor-positionable probe further comprising a back pressure probe and a capacitive probe. The capacitive probe is substantially cocentric with the back pressure probe. The air back pressure sensor is used to calibrate the capacitive sensor for a given dielectric permittivity of the conductive target, and the capacitive sensor is used to measure thickness, flatness, bow, and warpage of the ultra-thin electrically conductive target.