Abstract: Various methods and devices that involve radio frequency (RF) switches with clamped bodies are provided. An exemplary RF switch with a clamped body comprises a channel that separates a source and a drain. The RF switch also comprises a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain. The RF switch also comprises a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region. The clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. The RF switch can operate in a plurality of operating modes. The pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the RF switch is operating.

Abstract: A vertical semiconductor device is formed in a semiconductor layer having a first surface, a second surface and background doping. A first doped region, doped to a conductivity type opposite that of the background, is formed at the second surface of the semiconductor layer. A second doped region of the same conductivity type as the background is formed at the second surface of the semiconductor layer, inside the first doped region. A portion of the semiconductor layer is removed at the first surface, exposing a new third surface. A third doped region is formed inside the semiconductor layer at the third surface. Electrical contact is made at least to the second doped region (via the second surface) and the third doped region (via the new third surface). In this way, vertical DMOS, IGBT, bipolar transistors, thyristors, and other types of devices can be fabricated in thinned semiconductor, or SOI layers.

Abstract: An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer.

Abstract: A semiconductor structure is formed with a first wafer (e.g. a handle wafer) and a second wafer (e.g. a bulk silicon wafer) bonded together. The second wafer includes an active layer, which in some embodiments is formed before the two wafers are bonded together. A substrate is removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeC layer as an etch stop. In some embodiments, the SiGeC layer is then removed; but in some other embodiments, it remains as a strain-inducing layer.

Abstract: A charge pump regulator circuit includes an oscillator and one or more charge pumps. One or more oscillating signals are generated by the oscillator. Each oscillating signal has a frequency or amplitude or both that are variable dependent on a variable drive signal. For some embodiments having multiple oscillating signals, each oscillating signal is phase shifted from a preceding oscillating signal. For some embodiments having multiple charge pumps, each charge pump is connected to receive a corresponding one of the oscillating signals. Each charge pump outputs a voltage and current. For some embodiments having multiple charge pumps, the output of each charge pump is phase shifted from the outputs of other charge pumps. A combination of the currents thus produced is provided at about a voltage level to a load.

Abstract: A trap rich layer for an integrated circuit chip is formed by chemical etching and/or laser texturing of a surface of a semiconductor layer. In some embodiments, a trap rich layer is formed by a technique selected from the group of techniques consisting of laser texturing, chemical etch, irradiation, nanocavity formation, porous Si-etch, semi-insulating polysilicon, thermal stress relief and mechanical texturing. Additionally, combinations of two or more of these techniques may be used to form a trap rich layer.

Abstract: A charge pump regulator circuit includes a voltage controlled oscillator and a plurality of charge pumps. The voltage controlled oscillator has a plurality of inverter stages connected in series in a ring. A plurality of oscillating signals is generated from outputs of the inverter stages. Each oscillating signal has a frequency or amplitude or both that are variable dependent on a variable drive voltage. Each oscillating signal is phase shifted from a preceding oscillating signal. Each charge pump is connected to a corresponding one of the inverter stages to receive the oscillating signal produced by that inverter stage. Each charge pump outputs a voltage and current. The output of each charge pump is phase shifted from the outputs of other charge pumps. A combination of the currents thus produced is provided at about a voltage level to the load.

Abstract: Embodiments of the present invention provide for the provisioning of efficient support to semiconductor-on-insulator (SOI) structures. Embodiments of the present invention may additionally provide for SOI structures with improved heat dissipation performance while preserving the beneficial electrical device characteristics that accompany SOI architectures. In one embodiment, an integrated circuit is disclosed. The integrated circuit comprises a silicon-on-insulator die from a silicon-on-insulator wafer. The silicon on insulator die comprises an active layer, an insulator layer, a substrate, and a strengthening layer. The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer. The support region and the strengthening layer are configured to act in combination to provide a majority of a required stabilizing force to the silicon-on-insulator die when it is singulated from the silicon-on-insulator wafer.

Abstract: Embodiments of the present invention provide for the dissipation of heat from semiconductor-on-insulator (SOI) structures. In one embodiment, a method for fabricating an integrated circuit is disclosed. In a first step, active circuitry is formed in an active layer of a SOI wafer. In a second step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In a third step, insulator material is removed from the back side of the SOI wafer to form an excavated insulator region. In a fourth step, a thermal dissipation layer is deposited on said excavated insulator region. The thermal dissipation layer is thermally conductive and electrically insulating.

Abstract: A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well.

Abstract: Embodiments of the present invention provide a device for level shifting an input signal. The device includes an output buffer that has: an output node, a p-FET coupled to a high reference voltage, and an n-FET coupled to a low reference voltage. The device also includes two latches. The first latch has a first latch output that drives a gate of the p-FET via an inverting circuit element. The second latch has a second latch output that drives a gate of the n-FET via a non-inverting circuit element. The device also includes a reset signal pulse generator that receives the input signal and generates a reset signal pulse in response to a transition in the input signal. Both of the latches are placed in a reset state by the reset signal pulse.

Abstract: A vertical semiconductor device (e.g. a vertical power device, an IGBT device, a vertical bipolar transistor, a UMOS device or a GTO thyristor) is formed with an active semiconductor region, within which a plurality of semiconductor structures have been fabricated to form an active device, and below which at least a portion of a substrate material has been removed to isolate the active device, to expose at least one of the semiconductor structures for bottom side electrical connection and to enhance thermal dissipation. At least one of the semiconductor structures is preferably contacted by an electrode at the bottom side of the active semiconductor region.

Abstract: A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well.

Abstract: An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface, where the first surface of the insulating layer is less than 10 microns below an upper plane of the integrated circuit assembly. An active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the active layer and formed on the second surface of the insulating layer, and is also electrically connected to a printed circuit board. A method of fabricating an integrated circuit assembly includes coupling a handle wafer to the active layer of a semiconductor-on-insulator wafer, removing the substrate of the semiconductor-on-insulator, forming a bond pad connecting to the active layer on the exposed insulator surface, bonding the bond pad to a printed circuit board using a solder bump, and removing the handle wafer.

Abstract: An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate.

Abstract: Embodiments of the present invention provide for the removal of excess carriers from the body of active devices in semiconductor-on-insulator (SOI) structures. In one embodiment, a method of fabricating an integrated circuit is disclosed. In one step, an active device is formed in an active layer of a semiconductor-on-insulator wafer. In another step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In another step, an insulator material is removed from a back side of the SOI wafer to form an excavated insulator region. In another step, a conductive layer is deposited on the excavated insulator region. Depositing the conductive layer puts it in physical contact with a body of an active device in a first portion of the excavated insulator region. The conductive layer then couples the body to a contact in a second detached portion of the excavated insulator region.

Abstract: An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer.