Abstract: A method of producing silicon carbide (SiC), by introducing into the interior of a furnace a quantity of relatively pure elemental silicon and a quantity of elemental carbon; subjecting the interior of the furnace to a vacuum; and heating the silicon and carbon to a temperature of 1500° C.-2200° C. to vaporize the silicon and to react it with the carbon to produce silicon carbide. Several embodiments are described for producing a heating or lighting element and a high temperature sensor, respectively, in which the carbon is in the form of a shaped body made of a mixture of finely-divided particles of carbon in a binder, and the silicon is in the form of finely-divided particles applied to the outer surface of the shaped body. A further embodiment is described for producing silicon carbide powder, in which the carbon and silicon are each in the form of finely-divided particles, and are physically separated from each other by a graphite sheet permeable to silicon vapor.

Abstract: A method of producing silicon carbide (SiC) heating and lighting elements, by mixing a quantity of finely-divided particles of carbon in a binder; shaping the mixture; applying finely-divided particles of elemental silicon over the shaped mixture; and heating the shaped mixture in a furnace, while subjected to a vacuum, to vaporize and diffuse the silicon and to react the silicon vapor with the carbon in the binder, to convert the carbon to silicon carbide. The silicon particles includes a dopant to reduce the internal resistance of the produced silicon carbide to a value of up to a few hundred &sgr;hm-cms.

Abstract: A method of producing silicon carbide (SiC), by introducing into the interior of a furnace a quantity of relatively pure elemental silicon and a quantity of elemental carbon; subjecting the interior of the furnace to a vacuum; and heating the silicon and carbon to a temperature of 1500° C.-2200° C. to vaporize the silicon and to react it with the carbon to produce silicon carbide. Several embodiments are described for producing a heating or lighting element and a high temperature sensor, respectively, in which the carbon is in the form of a shaped body made of a mixture of finely-divided particles of carbon in a binder, and the silicon is in the form of finely-divided particles applied to the outer surface of the shaped body. A further embodiment is described for producing silicon carbide powder, in which the carbon and silicon are each in the form of finely-divided particles, and are physically separated from each other by a graphite sheet permeable to silicon vapor.

Abstract: A method of producing silicon carbide (SiC) heating and lighting elements, by mixing a quantity of finely-divided particles of carbon in a binder; shaping, the mixture; applying finely-divided particles of elemental silicon over the shaped mixture; and heating the shaped mixture in a furnace, while subjected to a vacuum, to vaporize and diffuse the silicon and to react the silicon vapor with the carbon in the binder, to convert the carbon to silicon carbide. The silicon particles includes a dopant to reduce the internal resistance of the produced silicon carbide to a value of up to a few hundred &sgr;hm-cms.

Abstract: A method of producing silicon carbide (SiC) high-temperature sensor elements by mixing a quantity of finely-divided particles of carbon in a binder; shaping, the mixture; applying finely-divided particles of elemental silicon over the shaped mixture; and heating the shaped mixture in a furnace, while subjected to a vacuum, to vaporize and diffuse the silicon and to react the silicon vapor with the carbon in the binder to convert the carbon to silicon carbide. The silicon particles are substantially free of dopants to produce a silicon carbide high-temperature sensor element having a high internal resistance of at least hundreds of Kilohm-cms.

Abstract: A method of producing finely-divided particles of silicon carbide (SiC), by introducing into a furnace a crucible containing a layer of finely-divided particles of carbon and a layer of finely-divided particles of elemental silicon separated by a layer permeable to silicon vapor; subjecting the interior of the furnace to a vacuum; and heating the crucible to a sufficiently high temperature for a sufficiently long period of time to vaporize and diffuse the silicon and to react the silicon vapor with the carbon particles to convert them to silicon carbide particles.