Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.
Abstract: A wear coating is disclosed that includes a layer treated by a trifunctional organosilane. An article is also disclosed, the article having a surface to which the wear coating is applied. A method of applying the wear coating is also disclosed. In some embodiments, the organosilane is trimethylsilane and the wear coating is applied by chemical vapor deposition, followed by heat treating the wear coating in the presence of the trimethylsilane.
Type:
Application
Filed:
October 5, 2011
Publication date:
September 19, 2013
Applicant:
SILCOTEK CORP.
Inventors:
David A. Smith, James B. Mattzela, Paul H. Silvis, Gary A. Barone, Martin E. Higgins
Abstract: The present invention relates to a chemical vapor deposition coating, a chemical vapor deposition article, and a chemical vapor deposition method. The coating, article, and method involve thermal decomposition of dimethylsilane to achieve desired surface properties.
Type:
Application
Filed:
October 26, 2010
Publication date:
October 4, 2012
Applicant:
SILCOTEK CORP.
Inventors:
David A. Smith, James B. Mattzela, Paul H. Silvis, Gary A. Barone
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