Abstract: Chemical vapor deposition articles and processes include a chemical vapor deposition functionalization on a material, the material including an sp3 arrangement of carbon. The chemical vapor deposition functionalization is positioned to be contacted by a process fluid, a hydrocarbon, an analyte, exhaust, or a combination thereof. Additionally or alternatively, the chemical vapor deposition functionalization is not of a refrigerator shelf or a windshield.
Abstract: A chemical vapor deposition process and coated article are disclosed. The chemical vapor deposition process includes positioning an article in a chemical vapor deposition chamber, then introducing a deposition gas to the chemical vapor deposition chamber at a sub-decomposition temperature that is below the thermal decomposition temperature of the deposition gas, and then heating the chamber to a super-decomposition temperature that is equal to or above the thermal decomposition temperature of the deposition gas resulting in a deposited coating on at least a surface of the article from the introducing of the deposition gas. The chemical vapor deposition process remains within a pressure range of 0.01 psia and 200 psia and/or the deposition gas is dimethylsilane. The coated article includes a substrate subject to corrosion and a deposited coating on the substrate, the deposited coating having silicon, and corrosion resistance.
Type:
Grant
Filed:
August 10, 2015
Date of Patent:
March 13, 2018
Assignee:
Silcotek Corp.
Inventors:
Min Yuan, David A. Smith, Paul H. Silvis, James B. Mattzela
Abstract: The present invention relates to a chemical vapor deposition coating, a chemical vapor deposition article, and a chemical vapor deposition method. The coating, article, and method involve thermal decomposition of dimethylsilane to achieve desired surface properties.
Type:
Grant
Filed:
October 26, 2010
Date of Patent:
October 3, 2017
Assignee:
Silcotek Corp.
Inventors:
David A. Smith, James B. Mattzela, Paul H. Silvis, Gary A. Barone
Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.
Abstract: A wear coating is disclosed that includes a layer treated by a trifunctional organosilane. An article is also disclosed, the article having a surface to which the wear coating is applied. A method of applying the wear coating is also disclosed. In some embodiments, the organosilane is trimethylsilane and the wear coating is applied by chemical vapor deposition, followed by heat treating the wear coating in the presence of the trimethylsilane.
Type:
Application
Filed:
October 5, 2011
Publication date:
September 19, 2013
Applicant:
SILCOTEK CORP.
Inventors:
David A. Smith, James B. Mattzela, Paul H. Silvis, Gary A. Barone, Martin E. Higgins
Abstract: The present invention relates to a chemical vapor deposition coating, a chemical vapor deposition article, and a chemical vapor deposition method. The coating, article, and method involve thermal decomposition of dimethylsilane to achieve desired surface properties.
Type:
Application
Filed:
October 26, 2010
Publication date:
October 4, 2012
Applicant:
SILCOTEK CORP.
Inventors:
David A. Smith, James B. Mattzela, Paul H. Silvis, Gary A. Barone