Abstract: A programmable logic circuit comprising a plurality of programmable logic elements and a plurality of programmable interconnect means, and memory means for storing the configuration of the logic elements and interconnect means, wherein said memory means is formed and arranged to store a multiplicity of different configurations for each said logic element.

Abstract: Disclosed is a cmos sram cell including two cross-coupled inverters, each having a pmos and an nmos transistor, a first signal line connected to the sources of each of the nmos transistors, a second signal line, parallel to the first signal line, and connected to the source of one of said pmos transistors, and a third signal line connected to the source of the other of said pmos transistors. The third signal line may be orthogonal to the first and second signal lines. Also disclosed is a cmos sram cell including two cross-coupled inverters, a pair of bitlines for writing data to the cell, and at least one further bitline for reading data from the cell.