Abstract: A photovoltaic device and related methods of manufacture. The device has a support substrate having a support surface region. The device has a thickness of crystalline material characterized by a plurality of worm hole structures therein overlying the support surface region of the support substrate. The worm hole structures are characterized by a density distribution. The one or more worm hole structures have respective surface regions. In a specific embodiment, the thickness of crystalline material has an upper surface region. The device has a passivation material overlying the surface regions to cause a reduction of a electron-hole recombination process. A glue layer is provided between the support surface region and the thickness of crystalline material. A textured surface region formed overlying from the upper surface region of the thickness of crystalline material.

Abstract: A photovoltaic device and related methods of manufacture. The device has a support substrate having a support surface region. The device has a thickness of crystalline material overlying the support surface region of the support substrate. Preferably, the thickness of material has an upper surface region. The device has a glue layer provided between the support surface region and the thickness of material according to a specific embodiment. In a preferred embodiment, the device has a textured surface region formed overlying from the upper surface region of the thickness of crystalline material. Depending upon the embodiment, the device has a plurality of elevated regions having a first thickness defining a first portion of the textured surface region and a plurality of recessed regions having a second thickness defining a second portion of the textured surface region.

Abstract: Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.