Patents Assigned to Silicon Display Technology
  • Patent number: 11715396
    Abstract: A display apparatus according to an embodiment includes a plurality of display modules including a display region where a plurality of pixels are positioned and a non-display region outside the display region, wherein, for two display modules adjacent among a plurality of display modules to provide a continuous display region, the display region of the first display module among two adjacent display modules and the non-display region of the second display module among the two adjacent display modules overlap each other in a plane view.
    Type: Grant
    Filed: July 6, 2022
    Date of Patent: August 1, 2023
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jong Woo Jin, Jinhyeong Yu, Hyunwoo Kim, Jae Ho Shin
  • Patent number: 11443545
    Abstract: A sensor pixel circuit may include: a photodiode to which a current flows according to incident light; a storage capacitor connected in parallel to the photodiode; a first transistor for connecting a bias voltage and the photodiode by a contact of a recognition object; and a second transistor for transmitting charges stored in the storage capacitor to a data line.
    Type: Grant
    Filed: November 27, 2020
    Date of Patent: September 13, 2022
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jong Woo Jin, Jin Hyeong Yu, Youn Duck Nam
  • Patent number: 11227137
    Abstract: A sensor pixel according to a feature of the present invention includes: a detection electrode that forms capacitance with a recognition target; and a sensor pixel circuit that is connected to the detection electrode, generates a detection signal by using the detection electrode, and to which a DC voltage for resetting is supplied, wherein a coupling pulse is periodically applied to the recognition target that forms the capacitance with the detection electrode, and the detection signal may be changed according to the coupling pulse.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: January 18, 2022
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jong Woo Jin, Jin Hyeong Yu, Kwanwon Lim, Youn Duck Nam
  • Patent number: 10977475
    Abstract: A fingerprint recognition sensor according to an exemplary embodiment of the present invention includes: a photo sensor for sensing light that is diffuse-reflected from a finger of a user and incident on the photo sensor, or that is transmitted through the finger and incident on the photo sensor; a first matrix positioned on the photo sensor and including a first opening; a second matrix positioned on the first matrix and including a second opening; and a cover layer including one surface contacting the finger and positioned on the second matrix, wherein, from among light that is diffuse-reflected from the finger and incident on the cover layer or that is transmitted through the finger and incident on the cover layer, light having an angle, formed by a normal line on the one surface of the cover layer and a path of the light incident on the cover layer, that is greater than a critical angle, sequentially passes through the second opening and the first opening and is incident on the photo sensor.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: April 13, 2021
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jong Woo Jin, Jin Hyeong Yu, Hyunwoo Jin, Jun Woo Chung, Youn Duck Nam
  • Patent number: 10931906
    Abstract: There is provided a sensor pixel, including: a first transistor controlled depending on a mode selection voltage supplied to one end thereof; a second transistor including a gate connected to the other end of the first transistor; and a photoconductor connected to one end of the second transistor, wherein the sensor pixel operates in an optical mode when the first transistor is turned on, and the sensor pixel operates in a capacitive mode when the first transistor is turned off.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: February 23, 2021
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Kijoong Kim, Jin Hyeong Yu, Young Man Park
  • Patent number: 10872224
    Abstract: A smart card according to an exemplary embodiment of the present invention includes: a transparent substrate including a side contacting a finger of a user; a reflection layer separated from the transparent substrate, facing the transparent substrate, and including a metal material; a photosensor provided between the transparent substrate and the reflection layer, and sensing light reflected and input from the reflection layer; and a card substrate including an opaque material and covering the reflection layer.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: December 22, 2020
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jong Woo Jin, Taehan Go, Youn Duck Nam
  • Patent number: 10755070
    Abstract: A fingerprint and image sensor includes a plurality of data lines, a plurality of scan lines, to which a plurality of scan signals is transferred, a plurality of reset scan lines, to which a plurality of reset scan signals is transferred, and a sensor panel, which is reset by a reset voltage, which is synchronized to a corresponding reset scan signal and is transferred, generates a pixel voltage according to light supplied during an exposure period, and includes a plurality of sensor pixels, which is synchronized to a corresponding scan signal and transfers the pixel voltage to a corresponding data line, and the exposure period may be a period from a time point, at which the corresponding reset scan signal is changed to an off-level, to a time point, at which the corresponding scan signal is changed to an on-level.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: August 25, 2020
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Kijoong Kim, Taehan Go, Jin Hyeong Yu, Ji Ho Hur, Jong Woo Jin, Young Man Park, Youn Duck Nam
  • Patent number: 10438042
    Abstract: An optical fingerprint recognition sensor may improve internal light utilization efficiency and includes: a glass substrate; a protection layer that is positioned on the glass substrate; an active layer that is positioned above the glass substrate and in the protection layer; and a functional layer that is positioned in the protection layer and on the active layer and that includes a first transparent oxide layer and a first metal layer that are sequentially stacked.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: October 8, 2019
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jaemin Kim, Kijoong Kim, Ow Tae Kwon, Ji Ho Hur
  • Patent number: 10424672
    Abstract: An oxide semiconductor transistor according to an exemplary embodiment of the present invention includes: a substrate; a first gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and the first gate electrode; an oxide semiconductor layer disposed on the gate insulating layer; an etch stopper layer disposed on the oxide semiconductor layer; and a source electrode and a drain electrode disposed on the oxide semiconductor layer and the etch stopper layer and spaced apart from each other.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: September 24, 2019
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Suhui Lee, Sung-ryong Moon, Jaemin Kim
  • Patent number: 10410734
    Abstract: The present invention relates to a shift register configured of a plurality of stages applying two clock signals among four clock signals that are sequentially generated as an input and applying a start signal as the input, wherein a first stage charges the start signal to a P-node and outputs a first output signal and a first carry signal by using the voltage of the P-node as a driving voltage when a first clock signal is applied, and resets the P-node when a second clock signal is applied, a second stage pre-charges a start signal input to the first stage to the P-node, charges the first carry signal to the P-node, outputs a second output signal and a second carry signal by using the voltage of the P-node as the driving voltage when the second clock signal is applied, and resets the P-node when a third clock signal is applied, and a third stage and following stages pre-charge a carry signal of the second previous stage to the P-node, charge the carry signal of the previous stage to the P-node, output the ou
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: September 10, 2019
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Kijoong Kim Kim, Jin Hyeong Yu, Ji Ho Hur
  • Patent number: 10354115
    Abstract: The present invention relates to a capacitive fingerprint sensor, and the capacitive fingerprint sensor includes: a fingerprint sensor electrode for sensing a fingerprint of a human body; a first transistor of which a current or an output voltage is changed according to a voltage change of capacitive coupling formed by fingerprint capacitance formed when a fingerprint contacts the fingerprint sensor electrode and coupling capacitance formed for capacitive coupling; a fifth transistor that resets a gate electrode of the first transistor and applies capacitive coupling to the gate electrode of the first transistor through a coupling pulse; a second transistor of which a current or an output voltage is changed due to a difference in the current flowing through the first transistor and a gate voltage is maintained by a capacitor; a third transistor that resets a gate electrode of the second transistor; and a fourth transistor that controls a current flowing through the second transistor or an output voltage of th
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: July 16, 2019
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Ki Joong Kim, Jin Hyeong Yoo, Bong Yeob Hong, Yong Kuk Kim, Ji Ho Hur
  • Patent number: 10217399
    Abstract: The present invention relates to a level shifter including: a first inverter applied with a first voltage and a second voltage of different polarities and operated depending on an input voltage to output a first inverting output signal; a second inverter applied with the first voltage and the second voltage and operated depending on the first inverting output signal to output a second inverting output signal having an opposite polarity to that of the first inverting output signal; a driver applied with a third voltage and a fourth voltage, including a first load transistor having the first inverting output signal as a gate input and a second load transistor having a fifth voltage as the gate input, and outputting an output voltage having an increased level with respect to the input voltage; and a bootstrap capacitor positioned between an output terminal of the second inverter and a gate electrode of the second load transistor to help the fifth voltage to be bootstrapped depending on the second inverting outpu
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: February 26, 2019
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Kijoong Kim, Young Man Park, Ji Ho Hur
  • Patent number: 10210373
    Abstract: Provided is a fingerprint recognition sensor capable of sensing a fingerprint using optical and capacitive methods, the sensor including: a capacitive fingerprint sensing unit that includes a transistor (T2) in which a flowing current is changed depending on an output voltage of a fingerprint sensing electrode capable of sensing the humans fingerprint; and an optical fingerprint sensing unit which changes the flowing current in the transistor (T2) due to a difference in reverse current of a photodiode generated by light and shade depending on existence or non-existence of the fingerprint.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: February 19, 2019
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Ki Joong Kim, Ji Ho Hur, Bong Yeob Hong
  • Patent number: 10127430
    Abstract: Disclosed is a fingerprint recognition sensor including: a backlight unit including a base layer positioned on one surface of a substrate and including a transparent material and a light source irradiating light to the inside of the base layer on one side of the base layer, in which light in which an incident angle on a surface facing the substrate is larger than a critical angle is transmitted toward the substrate; a cover layer spaced apart from the substrate and facing the other surface of the substrate; multiple sensor pixels defined by multiple scan lines and multiple data readout lines on the other surface of the substrate and positioned between the substrate and the cover layer; and multiple photo sensors positioned in the respective sensor pixels and sensing light transmitted on the base layer toward the substrate and total-reflected on a surface contacting a fingerprint of a user on the cover layer.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: November 13, 2018
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jaemin Kim, Kijoong Kim, Jin Hyeong Yu, Young Man Park, Yeon Hwa Kim, Ji Ho Hur
  • Patent number: 10078777
    Abstract: Disclosed are a fingerprint recognition sensor including: a light source positioned while being spaced apart on one surface of the substrate and irradiating light toward the substrate; and a light direction switching layer positioned between the substrate and the light source, having a thickness-direction cross-section having a right-angled triangular shape, and including multiple protrusions constituted by a first surface in which the light irradiated from the light source is incident and refracted, a second surface contacting the one surface of the substrate, in which the refracted light is transmitted toward the substrate, and a third surface vertical to the one surface of the substrate, and a mobile display device having the same.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: September 18, 2018
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jaemin Kim, Kijoong Kim, Young Man Park, Ji Ho Hur
  • Publication number: 20180166544
    Abstract: The present invention relates to an oxide semiconductor thin film transistor and a manufacturing method thereof, and the manufacturing method of the oxide semiconductor thin film transistor includes: a first step for depositing and patterning a gate layer on a substrate to form a gate electrode; a second step for depositing a gate insulation layer on the gate electrode; a third step for depositing and patterning an oxide semiconductor on the gate insulation layer; and a fourth step for treating a plasma including fluorine (F) on the oxide semiconductor.
    Type: Application
    Filed: June 30, 2015
    Publication date: June 14, 2018
    Applicant: SILICON DISPLAY TECHNOLOGY
    Inventors: Soon Ho CHOI, Sung Ryong MOON
  • Publication number: 20180089486
    Abstract: The present invention relates to a capacitive fingerprint sensor, and the capacitive fingerprint sensor includes: a fingerprint sensor electrode for sensing a fingerprint of a human body; a first transistor of which a current or an output voltage is changed according to a voltage change of capacitive coupling formed by fingerprint capacitance formed when a fingerprint contacts the fingerprint sensor electrode and coupling capacitance formed for capacitive coupling; a fifth transistor that resets a gate electrode of the first transistor and applies capacitive coupling to the gate electrode of the first transistor through a coupling pulse; a second transistor of which a current or an output voltage is changed due to a difference in the current flowing through the first transistor and a gate voltage is maintained by a capacitor; a third transistor that resets a gate electrode of the second transistor; and a fourth transistor that controls a current flowing through the second transistor or an output voltage of th
    Type: Application
    Filed: April 7, 2016
    Publication date: March 29, 2018
    Applicant: SILICON DISPLAY TECHNOLOGY
    Inventors: Ki Joong KIM, Jin Hyeong YOO, Bong Yeob HONG, Yong Kuk KIM, Ji Ho HUR
  • Patent number: 9864893
    Abstract: The present invention relates to an optical fingerprint sensor which can comprise: a backlight unit for irradiating light; an uneven surface layer onto which the light from the backlight unit is irradiated; and a photosensor unit arranged between the backlight unit and the uneven surface layer so as to detect the light irradiated from the backlight unit and reflected from a user's fingerprint coming into contact with the uneven surface layer.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: January 9, 2018
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Ki Joong Kim, Ji Ho Hur, Soon Ho Choi
  • Patent number: 9847366
    Abstract: An exemplary embodiment of the present invention provides an infrared image sensor including: a sensor pixel connected with a data lead-out line and a scan line disposed on a surface of a substrate; a wavelength converter positioned in the sensor pixel and disposed in an internal movement path of infrared rays, including an anti-Stokes material that absorbs infrared rays and converts them into visible rays to emit them; and a photosensor part positioned in the sensor pixel to sense the visible rays converted by the wavelength converter.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: December 19, 2017
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Jaemin Kim, Kijoong Kim, Jin Hyeong Yu, Ji Ho Hur
  • Patent number: 9811712
    Abstract: Provided is a intensified sensor array for static electricity having a structure in which a static electricity preventing wiring covers an upper surface of a pixel circuit to cut off static electricity, so when static electricity of a high voltage is momentarily generated, the static electricity induced through the static electricity preventing wiring is discharged, thereby being capable of effectively protecting the pixel circuit of a lower part from the static electricity.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: November 7, 2017
    Assignee: SILICON DISPLAY TECHNOLOGY
    Inventors: Moon Hyo Kang, Ji Ho Hur, Hyo Jun Kim, Bong Yeob Hong