Abstract: Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.

Abstract: Unevenness detecting apparatus for compensating for threshold voltage and method thereof is provided with a plurality of scan lines and a plurality of data lines and a pixel circuit arranged in each point which the scan lines and the data lines are intersected. The unevenness detecting apparatus for compensating for the threshold voltage and method thereof may accurately sense a state of minute unevenness such as fingerprints by using an active element (e.g., TFT) as an element of which pixel circuit is composed.

Abstract: Disclosed are driving circuit and method which are used in an Organic Light Emitting Diode (OLED), and more specifically to a driving circuit of an organic light emitting diode and a driving method thereof which use a thin film transistor (TFT) as an active device. The driving circuit and method can uniformly produce luminance of the light emitting element because the driving current is produced by compensating the unevenness of threshold voltage of the active device. Further, the variance of the threshold voltage Vth due to deterioration of the transistor produced according as the driving circuit of the OLED is utilized for a long time is also compensated, thereby increasing life of the display device which applies the driving circuit of the OLED.

Abstract: Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted.

Abstract: The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the amorphous material; depositing a metal on the cap layer; and crystallizing the amorphous material. According to the present invention, the surface of the amorphous material is protected by the cap layer, so that clean surface can be obtained and the roughness of the surface can be remarkably reduced during thermal process and sample handling. In addition, the cap layer is disposed between the amorphous material and the metal to diffuse the metal, so that the metal contamination due to the direct contact of the metal and the amorphous material in the conventional method can be remarkably reduced.

Abstract: Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transparent metal oxide layer can be used as a channel region and the unoxidized portions of the transparent metal oxide layer can be used as source and drain electrodes. The method comprises the steps of forming a gate electrode on a substrate and forming a gate insulating layer thereon, forming a transparent metal oxide layer on the gate insulating layer, forming an oxidation barrier layer on the transparent metal oxide layer in such a manner that a portion of the transparent metal oxide layer positioned over the gate electrode is exposed, and locally oxidizing only the exposed portion of the transparent metal oxide layer to convert the exposed portion into a semiconductor layer.