Patents Assigned to Silicon Material, Inc.
  • Patent number: 4062102
    Abstract: A process for manufacturing a solar cell from a reject semiconductor wafer comprising stripping all external layers from the wafer, etching the surfaces of the wafer so as to effectively remove all P/N junctions without pitting the wafer surface, introducing a layer of dopant to form a P/N junction in the front wafer surface, forming a first patterned conductive electrode over the dopant layer, and forming a second conductive electrode on the back surface of the wafer. In the preferred embodiment a sputtering operation is used to form the conductive electrodes.
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: December 13, 1977
    Assignee: Silicon Material, Inc.
    Inventors: John E. Lawrence, Icheng Wu