Patents Assigned to Silicon Precision Industries Co., Ltd.
  • Patent number: 11792938
    Abstract: A carrier structure is provided. A spacer is formed in an insulation board body provided with a circuit layer, and is not electrically connected to the circuit layer. The spacer breaks the insulation board body, and a structural stress of the insulation board body will not be continuously concentrated on a hard material of the insulation board body, thereby preventing warpage from occurring to the insulation board body.
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: October 17, 2023
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Yu-Lung Huang, Chee-Key Chung, Chang-Fu Lin, Yuan-Hung Hsu
  • Patent number: 10629572
    Abstract: An electronic package is provided, including: a first substrate having a first insulating portion; a first electronic component disposed on the first substrate; a second substrate having a second insulating portion and stacked on the first substrate through a plurality of conductive elements; and a first encapsulant formed between the first substrate and the second substrate. The first insulating portion of the first substrate differs in rigidity from the second insulating portion of the second substrate. As such, during a high temperature process, one of the first substrate and the second substrate pulls at the other to bend toward the same direction, thereby reducing warpage deviation of the overall electronic package. The present invention further provides a method for fabricating the electronic package.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: April 21, 2020
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Chi-Rui Wu, Fu-Tang Huang, Chia-Cheng Chen, Chun-Hsien Lin, Hsuan-Hao Mi, Yu-Cheng Pai
  • Patent number: 10587041
    Abstract: An electronic package structure is provided, including a substrate with an electronic component, an antenna element and a shielding element disposed on the substrate. The shielding element is positioned between the antenna element and the electronic component to prevent electromagnetic interference (EMI) from occurring between the antenna element and the electronic component. A method for fabricating the electronic package structure is also provided.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: March 10, 2020
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Chih-Yuan Shih, Chih-Hsien Chiu, Yueh-Chiung Chang, Tsung-Li Lin, Chi-Pin Tsai, Chien-Cheng Lin, Tsung-Hsien Tsai, Heng-Cheng Chu, Ming-Fan Tsai
  • Patent number: 10211082
    Abstract: An electronic package is provided, including: a circuit structure having opposite first and second surfaces, wherein first and second circuit layers are formed on the first and second surfaces of the circuit structure, respectively, the first circuit layer having a minimum trace width less than that of the second circuit layer; a separation layer formed on the first surface of the circuit structure; a metal layer formed on the separation layer and electrically connected to the first circuit layer; an electronic element disposed on the first surface of the circuit structure and electrically connected to the metal layer; and an encapsulant formed on the circuit structure to encapsulate the electronic element. By disposing the electronic element having high I/O function on the circuit structure, the invention eliminates the need of a packaging substrate having a core layer and thus reduces the thickness of the electronic package.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: February 19, 2019
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Lu-Yi Chen, Chang-Lun Lu
  • Patent number: 10096491
    Abstract: A method of fabricating a packaging substrate is provided, including: providing a carrier having two carrying portions, each of the carrying portions having a first side and a second side opposite to the first side and the carrying portions are bonded through the second sides thereof; forming a circuit layer on the first side of each of the carrying portions; and separating the two carrying portions from each other to form two packaging substrates. The carrying portions facilitate the thinning of the circuit layers and provide sufficient strength for the packaging substrates to undergo subsequent packaging processes. The carrying portions can be removed after the packaging processes to reduce the thickness of packages and thereby meet the miniaturization requirement.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: October 9, 2018
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Yu-Cheng Pai, Chun-Hsien Lin, Wei-Chung Hsiao, Ming-Chen Sun, Liang-Yi Hung
  • Patent number: 9999132
    Abstract: An electronic package is provided, which includes: a substrate, an electronic element disposed on the substrate, and an antenna structure disposed on the substrate. The antenna structure has a base portion and at least a support portion, the base portion including a plurality of openings and a frame separating the openings from one another, and the support portion supporting the base portion over the substrate. Therefore, no additional area is required to be defined on a surface of the substrate, and the miniaturization requirement of the electronic package is thus met.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: June 12, 2018
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Chih-Hsien Chiu, Chia-Yang Chen, Ying-Wei Lu, Jyun-Yuan Jhang, Ming-Fan Tsai
  • Patent number: 7884456
    Abstract: A semiconductor device and a fabrication method thereof are provided. An opening having at least one slanted side is formed on a substrate. At least one chip and at least one passive component are mounted on the substrate. An encapsulant having a cutaway corner is formed on the substrate to encapsulate the chip and the passive component, wherein the cutaway corner of the encapsulant is spaced apart from the slanted side of the opening by a predetermined distance. A singulation process is performed to cut the encapsulant to form a package with a chamfer. The package is embedded in a lid to form the semiconductor device, wherein a portion of the substrate located between the slanted side of the opening and the cutaway corner of the encapsulant is exposed from the encapsulant to form an exposed portion. The present invention also provides a carrier for the semiconductor device.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: February 8, 2011
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Yun-Lung Tsai, Yu-Chieh Tsai, Chien-Chih Chen, Chien-Ping Huang
  • Patent number: 7443016
    Abstract: A semiconductor device and a fabrication method thereof are provided. An opening having at least one slanted side is formed on a substrate. At least one chip and at least one passive component are mounted on the substrate. An encapsulant having a cutaway corner is formed on the substrate to encapsulate the chip and the passive component, wherein the cutaway corner of the encapsulant is spaced apart from the slanted side of the opening by a predetermined distance. A singulation process is performed to cut the encapsulant to form a package with a chamfer. The package is embedded in a lid to form the semiconductor device, wherein a portion of the substrate located between the slanted side of the opening and the cutaway corner of the encapsulant is exposed from the encapsulant to form an exposed portion. The present invention also provides a carrier for the semiconductor device.
    Type: Grant
    Filed: October 13, 2005
    Date of Patent: October 28, 2008
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Yun-Lung Tsai, Yu-Chieh Tsai, Chien-Chih Chen, Chien-Ping Huang
  • Publication number: 20080176358
    Abstract: The present invention provides a fabrication method of a multi-chip stacking structure. The method includes steps of: stacking the first chips on the chip carrier in a step-like manner to form a first chip module; electrically connecting the first chip module to the chip carrier by a plurality of first bonding wires; stacking the second chips on the first chip module in step-like manner to form a second chip module, wherein a bottom chip of the second chip module is stacked on a top chip of the first chip module by an adhesive layer with the bottom chip deviated from the top chip horizontally in a direction toward the first bonding wires; and electrically connecting the bond pads of the second chip module to the chip carrier by a plurality of second bonding wires.
    Type: Application
    Filed: January 23, 2008
    Publication date: July 24, 2008
    Applicant: Silicon Precision Industries Co., Ltd.
    Inventors: Chung-Lun Liu, Chin-Huang Chang, Yi-Feng Chang, Jung-Pin Huang, Chih-Ming Huang
  • Publication number: 20040238921
    Abstract: A ground-enhanced semiconductor package and a lead frame used in the package are provided. The semiconductor package includes a lead frame having a die pad, a plurality of tie bars connected with and supporting the die pad, a plurality of leads surrounding the die pad, and a ground structure, wherein the ground structure comprises at least one of first ground portions connected to the tie bars, and/or at least one of second ground portions connected to the die pad, and wherein the first ground portions are separate from each other, and the second ground portions are separate from each other; at least one chip mounted on the die pad and electrically connected to the leads and the ground structure; and an encapsulation body for encapsulating the chip and the lead frame. The separately-arranged ground portions allow thermal stresses to be released from the ground structure without rendering deformation issues.
    Type: Application
    Filed: August 5, 2003
    Publication date: December 2, 2004
    Applicant: Silicon Precision Industries Co., Ltd
    Inventors: Yi-Shiung Lee, Chun-Yuan Li, Holman Chen, Shih-Tsun Huang, Chih-Yung Yun
  • Publication number: 20040238945
    Abstract: A thermally enhanced semiconductor package and a fabrication method thereof are provided. A plurality of conductive bumps are formed on bond pads on an active surface of a chip. A heat sink is attached to an inactive surface of the chip and has a surface area larger than that of the chip. An encapsulation body encapsulates the heat sink, chip and conductive bumps, while exposing a bottom or surfaces, not for attaching the chip, of the heat sink and ends of the conductive bumps outside. A plurality of conductive traces are formed on the encapsulation body and electrically connected to the ends of the conductive bumps. A solder mask layer is applied over the conductive traces and formed with a plurality of openings for exposing predetermined portions of the conductive traces. A solder ball is implanted on each exposed portion of the conductive traces.
    Type: Application
    Filed: August 5, 2003
    Publication date: December 2, 2004
    Applicant: Silicon Precision Industries Co., Ltd.
    Inventors: Chien-Ping Huang, Cheng-Hsu Hsiao
  • Patent number: 6414384
    Abstract: A package structure stacking chips on a front surface and a back surface of a substrate including at least a substrate, a plurality of chip sets, a plurality of support members, a plurality of glue layers, a plurality of wires, and a mold compound. The substrate has a front surface and a back surface opposite to the front surface. Each chip set has one or more chips, each chip having a plurality of bonding pads. The chip sets are stacked as a laminate on the front surface of the substrate, respectively. A plurality of support members are arranged between each two adjacent chip sets. A glue layers are used to connect the support members, the chip sets, and the substrate. The chip in the same chip sets is electrically connected to each other or to the substrate by the bonding pads. Finally, the front surface of the substrate, the support members, the chip sets, and the glue layers are encapsulated with a mold compound. Moreover, a plurality of flip chips are deposited on the back surface of the substrate.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: July 2, 2002
    Assignee: Silicon Precision Industries Co., Ltd.
    Inventors: Randy H. Y. Lo, Chien-Ping Huang, Chi-Chuan Wu