Patents Assigned to Silicon Resources, Inc.
  • Patent number: 11267714
    Abstract: An apparatus and a process for the production of high purity silicon from silica containing material such as quartz or quartzite, using a vacuum electric arc furnace, are disclosed.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: March 8, 2022
    Assignee: HPQ-SILICON RESOURCES INC.
    Inventors: Ali Shahverdi, Pierre Carabin
  • Patent number: 5882543
    Abstract: Methods and compositions for dehydrating, passivating and coating HVAC and refrigeration systems having fluid enclosures are provided. The methods include adding a composition including organometalloid and/or organometallic compounds to the system, allowing the compositions to react with water in the system and sealing the system. The organometallic compounds include at least one alkoxy, carboxy and/or enoxy functional group bound to the metal element within the compound. The organometalloid compounds include at least one enoxy functional group bound to the metalloid element within the compound. Compositions for sealing such systems are also provided. The sealing compositions also include one or more organometallic compounds having at least one enoxy, carboxy and/or alkoxy group and/or organometalloid compounds which include at least three hydrolyzable groups, at least one of which is an enoxy group.
    Type: Grant
    Filed: May 6, 1997
    Date of Patent: March 16, 1999
    Assignee: Silicon Resources, Inc.
    Inventors: William R. Peterson, Renee E. Berman, David Giaccio
  • Patent number: 5429673
    Abstract: Novel compositions are provided for use in the vapor priming of substrates used in the preparation and production of microelectronic devices comprising a first component comprising an organosilane having a hydrolyzable silicon-nitrogen bond and a second component selected from the group consisting of a second organosilane different from the first component having a hydrolyzable silicon-nitrogen bond, a hydrocarbon, an ether, a disiloxane and an alkoxysilane in which all components have substantially the same boiling points at atmospheric pressure. These compositions which are vaporized and transported to an area of silylation on a substrate by an inert gas, silylate the substrate surface and provide for uniform successful coating with organic films. These organosilane mixtures allow for rapid vapor priming and silylation steps in the manufacture of microelectronic devices with successful subsequent coating of the substrates with uniform organic films.
    Type: Grant
    Filed: October 1, 1993
    Date of Patent: July 4, 1995
    Assignee: Silicon Resources, Inc.
    Inventors: William R. Peterson, Craig M. Stauffer