Abstract: An innovative readout circuit for a pixel detector, for example a solid-state X-ray pixel array, The invention includes a bank of successive approximation ADCs with a DAC in a feedback path. The integral non-linearity of the DACs and of the ADC is reduced to very low levels by providing a common resistive ladder for all the channels. In this way, the conversion law is sensibly the same for all the ADC, thus avoiding stripes or artefacts on the acquired image.

Abstract: An innovative readout circuit for a pixel detector, for example a solid-state X-ray pixel array, The invention includes a bank of successive approximation ADCs with a DAC in a feedback path. The integral non-linearity of the DACs and of the ADC is reduced to very low levels by providing a common resistive ladder for all the channels. In this way, the conversion law is sensibly the same for all the ADC, thus avoiding stripes or artefacts on the acquired image.

Abstract: A memory architecture 400 includes an array of memory cells partitioned into a plurality of subarrays 401. Each subarray 401 includes a plurality of memory cells organized in rows and columns, each row associated with a conductive wordline 407 and each column associated with a pair of conductive half-bitlines 403. The first sense amplifier 402 is selectively coupled to selected pair of half-bitlines 403. A second sense amplifier 402 is selectively coupled to the selected pair of half-bitlines 403. A first local I/O line 404 is coupled to first sense amplifier 402 and a second local I/O line 404 is coupled to the second sense amplifier 402. First and second sets of global I/O lines 405 are selectively coupled to the first and second I/O lines 404.