Abstract: An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
Type:
Grant
Filed:
July 5, 2006
Date of Patent:
October 12, 2010
Assignee:
Siliconix Technology C.V.
Inventors:
Rossano Carta, Luigi Merlin, Laura Bellemo
Abstract: A mask structure and process for forming trenches in a silicon carbide or other wafer, and for implanting impurities into the walls of the trenches using the same mask where the mask includes a thin aluminum layer and a patterned hard photoresist mask. A thin LTO oxide may be placed between the metal layer and the hard photoresist mask.
Type:
Grant
Filed:
April 23, 2007
Date of Patent:
October 5, 2010
Assignee:
Siliconix Technology C.V.
Inventors:
Luigi Merlin, Giovanni Richieri, Rossano Carta
Abstract: A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
Type:
Grant
Filed:
October 20, 2005
Date of Patent:
July 1, 2008
Assignee:
Siliconix Technology C.V.
Inventors:
Rossano Carta, Laura Bellemo, Luigi Merlin
Abstract: An active integrated rectifier and regulator module for providing charging current to a battery of an automobile including a stacked structure comprising two lead frames disposed above on another, the module including a voltage regulator and elements for active rectification of alternating current from a stator.