Patents Assigned to Siliconix Technology C.V.
  • Silicon carbide schottky diode
    Patent number: 9627553
    Abstract: A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H—SiC body.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: April 18, 2017
    Assignee: SILICONIX TECHNOLOGY C.V.
    Inventor: Giovanni Richieri
  • Solderable top metal for silicon carbide semiconductor devices
    Patent number: 9496421
    Abstract: A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: November 15, 2016
    Assignee: SILICONIX TECHNOLOGY C.V.
    Inventors: Rossano Carta, Laura Bellemo, Luigi Merlin
  • Power semiconductor switch with plurality of trenches
    Patent number: 9472403
    Abstract: A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
    Type: Grant
    Filed: November 15, 2010
    Date of Patent: October 18, 2016
    Assignee: SILICONIX TECHNOLOGY C.V.
    Inventors: Rossano Carta, Laura Bellemo, Giovanni Richieri, Luigi Merlin
  • SILICON CARBIDE SCHOTTKY DIODE
    Publication number: 20140042459
    Abstract: A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body.
    Type: Application
    Filed: February 5, 2013
    Publication date: February 13, 2014
    Applicant: SILICONIX TECHNOLOGY C.V.
    Inventor: Giovanni Richieri
  • POWER SEMICONDUCTOR SWITCH
    Publication number: 20110278591
    Abstract: A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
    Type: Application
    Filed: November 15, 2010
    Publication date: November 17, 2011
    Applicant: SILICONIX TECHNOLOGY C.V.
    Inventors: Rossano Carta, Laura Bellemo, Giovanni Richieri, Luigi Merlin
  • Schottky diode with improved surge capability
    Patent number: 7812441
    Abstract: An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
    Type: Grant
    Filed: July 5, 2006
    Date of Patent: October 12, 2010
    Assignee: Siliconix Technology C.V.
    Inventors: Rossano Carta, Luigi Merlin, Laura Bellemo
  • Mask structure for manufacture of trench type semiconductor device
    Patent number: 7808029
    Abstract: A mask structure and process for forming trenches in a silicon carbide or other wafer, and for implanting impurities into the walls of the trenches using the same mask where the mask includes a thin aluminum layer and a patterned hard photoresist mask. A thin LTO oxide may be placed between the metal layer and the hard photoresist mask.
    Type: Grant
    Filed: April 23, 2007
    Date of Patent: October 5, 2010
    Assignee: Siliconix Technology C.V.
    Inventors: Luigi Merlin, Giovanni Richieri, Rossano Carta
  • SOLDERABLE TOP METAL FOR SILICON CARBIDE SEMICONDUCTOR DEVICES
    Publication number: 20080286968
    Abstract: A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
    Type: Application
    Filed: July 1, 2008
    Publication date: November 20, 2008
    Applicant: SILICONIX TECHNOLOGY C.V.
    Inventors: Rossano Carta, Laura Bellemo, Luigi Merlin
  • Solderable top metal for SiC device
    Patent number: 7394158
    Abstract: A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
    Type: Grant
    Filed: October 20, 2005
    Date of Patent: July 1, 2008
    Assignee: Siliconix Technology C.V.
    Inventors: Rossano Carta, Laura Bellemo, Luigi Merlin