Patents Assigned to Siliconix Technology C.V.-IR
  • Semiconductor device with buffer layer
    Patent number: 8685849
    Abstract: A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: April 1, 2014
    Assignee: Siliconix Technology C. V. IR
    Inventors: Andrea Irace, Giovanni Breglio, Paolo Spirito, Andrea Bricconi, Diego Raffo, Luigi Merlin
  • SEMICONDUCTOR DEVICE WITH BUFFER LAYER
    Publication number: 20130115765
    Abstract: A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.
    Type: Application
    Filed: September 25, 2012
    Publication date: May 9, 2013
    Applicant: SILICONIX TECHNOLOGY C.V.IR
    Inventor: SILICONIX TECHNOLOGY C.V.IR
  • Semiconductor device with buffer layer
    Patent number: 8274128
    Abstract: A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.
    Type: Grant
    Filed: March 24, 2008
    Date of Patent: September 25, 2012
    Assignee: Siliconix Technology C. V. IR
    Inventors: Andrea Irace, Giovanni Breglio, Paolo Spirito, Andrea Bricconi, Diego Raffo, Luigi Merlin
  • SEMICONDUCTOR DEVICE WITH BUFFER LAYER
    Publication number: 20090224355
    Abstract: A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.
    Type: Application
    Filed: March 24, 2008
    Publication date: September 10, 2009
    Applicant: SILICONIX TECHNOLOGY C. V. IR
    Inventors: Andrea Irace, Giovanni Breglio, Paolo Spirito, Andrea Bricconi, Diego Raffo, Luigi Merlin
  • Active integrated rectifier regulator
    Patent number: 7292445
    Abstract: An active integrated rectifier and regulator module for providing charging current to a battery of an automobile including a stacked structure comprising two lead frames disposed above on another, the module including a voltage regulator and elements for active rectification of alternating current from a stator.
    Type: Grant
    Filed: February 25, 2004
    Date of Patent: November 6, 2007
    Assignee: Siliconix Technology C.V.-IR
    Inventor: Mario Linke