Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas comprising silicon elements to the silicon particles provided in the reaction pipe; and a heater unit configured to supply heat to an internal space of the reaction pipe, with a heater channel in which inert gas flows serially.
Type:
Grant
Filed:
September 28, 2011
Date of Patent:
November 12, 2013
Assignee:
SiliconValue LLC
Inventors:
Yunsub Jung, Keunho Kim, Yeokyun Yoon, Ted Kim
Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a head; a first body part connected with the head, located under the head, the first body part having a first reaction pipe provided therein; a second body part connected with the first body part, located under the first body part, the second body part having a second reaction pipe provided therein; and a bottom part connected with the second body part, located under the second body part, the bottom part having a flowing-gas supply nozzle, a reaction gas supply nozzle, a heater and an electrode assembled thereto.
Type:
Grant
Filed:
September 28, 2011
Date of Patent:
November 12, 2013
Assignee:
SiliconValue LLC
Inventors:
Yunsub Jung, Keunho Kim, Yeokyun Yoon, Ted Kim, Yong Ki Park, Kyung Koo Yoon, Myung Hoi Koo
Abstract: A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.
Type:
Grant
Filed:
September 28, 2011
Date of Patent:
February 19, 2013
Assignee:
Siliconvalue LLC.
Inventors:
Yunsub Jung, Keunho Kim, Yeokyun Yoon, Ted Kim