Abstract: A semiconductor package and a fabrication method thereof are provided, in which a ground pad on a chip is electrically connected to a ground plane on a substrate by means of an electrically-conductive wall formed over a side surface of the chip and an electrically-conductive adhesive used for attaching the chip to the substrate. Therefore, a wire-bonding process is merely implemented for power pads and signal I/O (input/output) pads on the chip without having to form ground wires on the ground pads for electrical connection purposes. This benefit allows the use of a reduced number of bonding wires and simplifies wire arrangement or routability. And, a grounding path from the chip through the electrically-conductive wall and electrically-conductive adhesive to the substrate is shorter than the conventional one of using ground wires, thereby reducing a ground-bouncing effect and improving electrical performances of the semiconductor package.

Abstract: A semiconductor package with an embedded heat spreader (EHS) is proposed, which can be used for the fabrication of a semiconductor package, such as a FCBGA (Flip-Chip Ball Grid Array) package with a heat spreader, and which is characterized by the provision of a plurality of recessed portions, either in the heat spreader attach area of the substrate, or in the support portion of the heat spreader, or in both, so as to allow the fill-in portions of the adhesive layer that are filled in these recessed portions to form anchor structures to benefit the heat spreader against crosswise shear stress. Moreover, since the provision of these recessed portions allows an increase in the contact area of the adhesive layer with the substrate and the heat spreader, it can help increase the adhesive strength to provide the heat spreader more securely adhered in position on the substrate.

Abstract: A semiconductor package with a heat sink is provided in which at least one chip is mounted on the substrate and covered by a heat sink. The heat sink is formed with a plurality of grooves or holes at positions in contact with the substrate, allowing an adhesive material to be applied between the heat sink and the substrate and filled into the grooves or holes for attaching the heat sink onto the substrate. The adhesive material filled into the grooves or holes provides an anchoring effect for firmly positioning the heat sink on the substrate. Therefore, it is not necessary to form predetermined holes on the substrate for being coupled to fixing members such as bolts, and incorporation of the heat sink would not affect trace routability and arrangement of input/output connections such as solder balls on the substrate and would not lead to cracks of the chip.

Abstract: A thermally enhanced semiconductor package with EMI (electric and magnetic interference) shielding is provided in which a chip is mounted on and electrically connected to a surface of a substrate, and a thermally conductive member is stacked on the chip and electrically coupled to the surface of the substrate by bonding wires. An encapsulant is formed and encapsulates the chip, thermally conductive member, and bonding wires. A plurality of solder balls are implanted on an opposite surface of the substrate. The thermally conductive member is grounded via the bonding wires, substrate, and solder balls, and provides an EMI shielding effect for the chip to protect the chip against external electric and magnetic interference. The thermally conductive member has a coefficient of thermal expansion similar to that of the chip, and reduces thermal stress exerted on the chip and enhances mechanical strength of the chip to thereby prevent chip cracks.

Abstract: A semiconductor package and a fabrication method thereof are provided in which a chip is mounted on a substrate, and a dielectric layer is applied over the substrate and chip, with bond fingers formed on the substrate and electric contacts formed on the chip being exposed outside. A metal layer is formed over the dielectric layer and the exposed bond fingers and electric contacts, and patterned to form a plurality of conductive traces that electrically connect the electric contacts of the chip to the bond fingers of the substrate. The conductive traces replace conventional wire bonding technology and thus eliminate the occurrence of wire sweep or short circuits in fabrication processes. Therefore, a low profile chip with a reduced pitch between adjacent electric contacts can be used without being limited to feasibility of the wire bonding technology.

Abstract: A semiconductor package with a chip supporting structure is provided, including a lead frame having a die pad and a plurality of leads, and a plurality of chip supporting members mounted on the die pad. Each of the chip supporting members has a first surface and an opposing second surface and has an identical height. After the second surfaces of the chip supporting members are attached to the die pad, the first surfaces of the chip supporting members are coplanarly arranged, and a chip is mounted on the first surfaces of the chip supporting members, making the chip supporting members interposed between the chip and die pad. A molding resin for encapsulating the chip is allowed to penetrate through and fill into gaps between the chip and die pad, so as to prevent void formation and assure quality of fabricated products.

Abstract: A semiconductor device with under bump metallurgy (UBM) and a method for fabricating the semiconductor device are provided, wherein a passivation layer is deposited on a surface of the semiconductor device where a plurality of bond pads are disposed, and formed with a plurality of openings for exposing the bond pads. A first metal layer is deposited over part of each of the bond pads and a portion of the passivation layer around the bond pad; then, a second metal layer is formed over the first metal layer and part of the bond pad uncovered by the first metal layer; subsequently, a third metal layer is formed over the second metal layer to thereby fabricate a UBM structure. Finally, a solder bump is formed on the UBM structure so as to achieve good bondability and electrical connection between the solder bump and UBM structure.

Abstract: A semiconductor package with a lead frame as a chip carrier and a method for fabricating the same are provided. The lead frame includes a die pad and a plurality of leads properly spaced apart from the die pad, each lead being composed of an inner lead portion and an outer lead portion, wherein the inner lead portion is directed toward the die pad, and the outer lead portion has a terminal. At least a chip is mounted on the die pad, and a first encapsulant is formed for encapsulating the chip, die pad and inner lead portions. An injection-molded second encapsulant is formed for encapsulating the first encapsulant and outer lead portions, but exposing the terminals of the outer lead portions. The second encapsulant made by injection molding can prevent resin flash over the exposed terminals, thereby assuring electrical-connection quality of the semiconductor package.

Abstract: A warpage-preventive circuit board and method for fabricating the same is provided, wherein a plurality of conductive traces are formed on a surface of an electrically-insulative core layer, and a plurality of discontinuous dummy circuit regions are disposed on the surface of the electrically-insulative core layer at area free of the conductive traces, with adjacent dummy circuit regions being spaced apart by at least a chink. During a high-temperature fabrication process, the dummy circuit regions help reduce thermal stress and the chinks absorb thermal expansion of the dummy circuit regions, to thereby prevent warpage of the circuit board and cracks of a chip mounted on the circuit board, such that yield and reliability of fabricated semiconductor devices can be improved.

Abstract: A window-type ball grid array (WBGA) semiconductor package with a lead frame as a chip carrier and a method for fabricating the same are provided. The lead frame has a plurality of leads encompassing an opening, each lead having an upper surface and an opposing lower surface. A resin material is pre-molded on the lower surfaces of the leads, with wire-bonding portions and ball-implanting portions defined on the leads being exposed. At least a chip is mounted on the upper surfaces of the leads and covers the opening, allowing the chip to be electrically connected to the wire-bonding portions of the leads by a plurality of bonding wires via the opening. Then, an encapsulant is formed to encapsulate the chip and fill into the opening for encapsulating the bonding wires. Finally, solder balls are implanted on the ball-implanting portions of the leads to complete fabrication of the semiconductor package.

Abstract: A semiconductor device with reinforced under-support structure and a method for fabricating the semiconductor device are provided, which can be used in the packaging of an MPBGA/TFBGA (Multi-Package Ball Grid Array & Thin Fine-pitch Ball Grid Array) module to help reinforce the TFBGA under-support structure therein. The proposed chip-packaging method is characterized by the provision of large-area solder pads at the corners of a solder-pad array used for TFBGA attaching application, in order to form solder bumps of a large cross section and volume during reflow process to help reinforce the TFBGA under-package structure. This feature can reinforce the TFBGA under-package structure without having to use flip-chip underfill technology, and without having to use extra large type solder balls and arrange pads into different pitches as in the prior art.

Abstract: A module device of stacked semiconductor packages and a method for fabricating the module device are proposed, wherein a first semiconductor package provided, and at least a second semiconductor package is stacked on and electrically connected to the first semiconductor package. The first semiconductor package includes a chip carrier for mounting at least a chip thereon; a circuit board positioned above and electrically connected to the chip carrier by a plurality of conductive elements; and an encapsulant for encapsulating the chip, conductive elements and encapsulant with a top surface of the circuit board being exposed, allowing the second semiconductor package to be electrically connected to the exposed top surface of the circuit board. As the circuit board is incorporated in the first semiconductor package by means of the encapsulant, it provides preferably reliability and workability for electrically connecting the second semiconductor package to the first semiconductor package.

Abstract: A cavity-down ball grid array (CDBGA) semiconductor package with a heat spreader is provided, in which a substrate is formed with at least a ground ring, a plurality of ground vias, a ground layer, and at least an opening for receiving at least a chip. The substrate is mounted in a cavity of the heat spreader, and an electrically conductive adhesive is disposed between an inner wall of the cavity and edges of the substrate, so as to allow the ground layer and the ground ring exposed to the edges of the substrate to be electrically connected to the heat spreader by means of the electrically conductive adhesive. By the above arrangement with the heat spreader being included in a grounding circuit path of the chip, ground floatation and excess ground inductance and resistance can be prevented for the semiconductor package, thereby solving heat-dissipation, electromagnetic interference and crosstalk problems.

Abstract: A warpage preventing substrate is provided. A plurality of first and second conductive traces are respectively formed on a first surface and a second surface of a core layer of the substrate, each conductive trace having a terminal, and a plurality of first and second non-functional traces are respectively formed on the first and second surfaces of the core layer at area free of the conductive traces. The first non-functional traces are arranged in different density from the second non-functional traces in a manner that, stress generated from the first conductive traces and first non-functional traces counteracts stress generated from the second conductive traces and second non-functional traces, to thereby prevent warpage of the substrate and maintain flatness of the substrate.

Abstract: A fabrication method for strengthening flip-chip solder bumps is provided to form a solder bump on a UBM (under bump metallurgy) structure formed over a semiconductor chip, which can prevent the UBM structure against oxidation and contamination and also enhance bondability between the solder bump and UBM structure, thereby improving reliability for packaging the semiconductor chip. This fabrication method is characterized in that before forming the solder bump, a dielectric layer made of BCB (benzo-cyclo-butene) or polyimide is deposited on the UBM structure, and used to protect the UBM structure against oxidation and contamination. Further, before forming the solder bump, a plasma-etching process is performed to remove the dielectric layer; the plasma-etching process is environmental-friendly without having to use a chemical solvent.

Abstract: An encapsulated semiconductor packaging device having a flash-proof body comprises the following steps. A lead frame having a die pad and a plurality of leads is provided so that the inner portion of each lead frame is separated from the lateral side of the die pad is be formed as a gap there between. Then, the tape is attached to the bottom surfaces of the die pad and the lead frame so as to seal the bottom opening of gap. A dam bar is formed on inner ends of the leads so as to be tightly attached to each lead and a tape, Therefore, the inner ends of the leads and the dam bar are regarded as a wire bonding area. Furthermore, the dam bar is attached to the leads and the tape below each lead so that the dam bar and the tape is formed as a flash-proof structure. Therefore, after the lead frame is placed into the package mold for forming a package, the encapsulation body having a core-hollowed portion is formed.