Patents Assigned to Silicor Materials Inc.
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Patent number: 10773963Abstract: The present invention provides a method of purifying aluminum, and/or use of the purified aluminum as a solvent metal to purify silicon.Type: GrantFiled: March 18, 2018Date of Patent: September 15, 2020Assignee: Silicor Materials Inc.Inventor: Alain Turenne
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Patent number: 9724755Abstract: The present invention relates to an apparatus and method for directional solidification of silicon. The apparatus can use a cooling platform to cool a portion of a bottom of a directional solidification crucible. The apparatus and method of the present invention can be used to make silicon crystals for use in solar cells.Type: GrantFiled: June 25, 2013Date of Patent: August 8, 2017Assignee: Silicor Materials, Inc.Inventor: Abdallah Nouri
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Patent number: 9676632Abstract: A method that includes: (a) forming a molten liquid from a solvent metal, silicon, and an alkali magnesium halide; (b) cooling the molten liquid to provide silicon crystals and a mother liquor; and (c) separating the silicon crystals from the mother liquor.Type: GrantFiled: June 25, 2013Date of Patent: June 13, 2017Assignee: Silicor Materials Inc.Inventors: Paul A. Mancini, Alain Turenne
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Patent number: 9663872Abstract: The present invention relates to an apparatus and method for purifying materials using a rapid directional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during directional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.Type: GrantFiled: March 13, 2014Date of Patent: May 30, 2017Assignee: Silicor Materials, Inc.Inventors: Abdallah Nouri, Alain Turenne
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Patent number: 9617160Abstract: Cover flux devices and methods are shown. Methods and devices are shown such that, as a solidification front moves from a cooling surface of a mold towards a surface of molten silicon substantially opposite the cooling surface, impurities are driven out of the solid silicon and into the liquid to react with a flux layer on the silicon.Type: GrantFiled: January 29, 2014Date of Patent: April 11, 2017Assignee: Silicor Materials Inc.Inventors: Alain Turenne, Abdallah Nouri, Christain Alfred
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Patent number: 9617618Abstract: The present invention relates to an apparatus and method for purifying materials using a fractional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during fractional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.Type: GrantFiled: February 1, 2013Date of Patent: April 11, 2017Assignee: Silicor Materials Inc.Inventors: Abdallah Nouri, Chunhui Zhang, Kamel Ounadjela
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Patent number: 9512008Abstract: The present invention provides for a flux composition, and the use thereof in a directional solidification for the purification of silicon.Type: GrantFiled: June 25, 2013Date of Patent: December 6, 2016Assignee: Silicor Materials, Inc.Inventors: Chunhui Zhang, Alain Turenne, Christain Alfred
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Patent number: 9352389Abstract: The present invention relates to an apparatus and method for purifying materials using a rapid directional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during directional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.Type: GrantFiled: September 16, 2011Date of Patent: May 31, 2016Assignee: Silicor Materials, Inc.Inventors: Abdallah Nouri, Kamel Ounadjela
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Publication number: 20160032482Abstract: The present invention relates to an apparatus and method for purifying materials using a rapid directional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during directional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.Type: ApplicationFiled: March 13, 2014Publication date: February 4, 2016Applicant: SILICOR MATERIALS INC.Inventors: Abdallah Nouri, Alain Turenne
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Patent number: 9243311Abstract: Embodiments of the present invention relate to a process for purifying silicon by removing one or both of phosphorus and boron.Type: GrantFiled: March 13, 2008Date of Patent: January 26, 2016Assignee: Silicor Materials Inc.Inventor: Scott Nichol
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Publication number: 20150376017Abstract: A method that includes: (a) forming a molten liquid from a solvent metal, silicon, and an alkali magnesium halide; (b) cooling the molten liquid to provide silicon crystals and a mother liquor; and (c) separating the silicon crystals from the mother liquor.Type: ApplicationFiled: June 25, 2013Publication date: December 31, 2015Applicant: Silicor Materials Inc.Inventors: Paul A. Mancini, Alain Turenne
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Publication number: 20150368114Abstract: The present invention provides for a flux composition, and the use thereof in a directional solidification for the purification of silicon.Type: ApplicationFiled: June 25, 2013Publication date: December 24, 2015Applicant: Silicor Materials Inc.Inventors: Chunhui Zhang, Alain Turenne, Christain Alfred
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Publication number: 20150336802Abstract: A method comprises forming a first molten liquid from a solvent metal and sodium carbonate, contacting the first molten liquid with silicon to form a second molten liquid, cooling the second molten liquid to provide silicon crystals and a mother liquor, and separating the silicon crystals from the mother liquor.Type: ApplicationFiled: June 25, 2013Publication date: November 26, 2015Applicant: Silicor Materials Inc.Inventor: Paul A. Mancini
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Publication number: 20150337454Abstract: The present invention relates to an apparatus and method for directional solidification of silicon. The apparatus can use a cooling platform to cool a portion of a bottom of a directional solidification crucible. The apparatus and method of the present invention can be used to make silicon crystals for use in solar cells.Type: ApplicationFiled: June 25, 2013Publication date: November 26, 2015Applicant: Silicor Materials Inc.Inventor: Abdallah Nouri
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Patent number: 9166071Abstract: A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating.Type: GrantFiled: December 24, 2009Date of Patent: October 20, 2015Assignee: Silicor Materials Inc.Inventors: Bill Phan, Renhua Zhang, John Gorman, Omar Sidelkheir, Jean Patrice Rakotoniaina, Alain Paul Blosse, Martin Kaes
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Patent number: 8968467Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.Type: GrantFiled: November 13, 2009Date of Patent: March 3, 2015Assignee: Silicor Materials Inc.Inventors: Fritz Kirscht, Marcin Walerysiak, Matthias Heuer, Anis Jouini, Kamel Ounadjela
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Publication number: 20150040821Abstract: The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.Type: ApplicationFiled: January 25, 2013Publication date: February 12, 2015Applicant: Silicor Materials Inc.Inventors: Alain Turenne, Dan Smith, Damon Dastgiri, Fritz G. Kirscht, Anthony Tummillo, Chunhui Zhang, Kamel Ounadjela
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Patent number: 8882912Abstract: Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.Type: GrantFiled: February 25, 2011Date of Patent: November 11, 2014Assignee: Silicor Materials Inc.Inventors: Fritz Kirscht, Vera Abrosimova, Matthias Heuer, Dieter Linke, Jean Patrice Rakotoniana, Kamel Ounadjela
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Patent number: 8801855Abstract: Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid.Type: GrantFiled: September 24, 2012Date of Patent: August 12, 2014Assignee: Silicor Materials Inc.Inventor: Scott Nichol
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Patent number: 8758507Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: GrantFiled: November 24, 2010Date of Patent: June 24, 2014Assignee: Silicor Materials Inc.Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela