Patents Assigned to SILTRONIX
  • Method for doping a semiconductor material
    Patent number: 8900981
    Abstract: A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: December 2, 2014
    Assignees: Apollon Solar, Siltronix
    Inventors: Maxime Forster, Erwann Fourmond, Jacky Stadler, Roland Einhaus, Hubert Lauvray
  • METHOD FOR DOPING A SEMICONDUCTOR MATERIAL
    Publication number: 20130115762
    Abstract: A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
    Type: Application
    Filed: July 1, 2011
    Publication date: May 9, 2013
    Applicants: SILTRONIX, APOLLON SOLAR
    Inventors: Maxime Forster, Erwann Fourmond, Jacky Stadler, Roland Einhaus, Hubert Lauvray