Abstract: Direct scanning microlithography process of a substrate such as a wafer, by means of an optical and/or electronic beam, for obtaining photomechanical or electromechanical lithography of submicrometric structures at the surface of the substrate, wherein the source of the optical and/or electronic beam used for lithography is kept at an appropriate distance from the substrate by means of a waveguide proximity probe, such as a fiber optic proximity probe capable of measuring rapid variation, depending on the distance, of the intensity of an electromagnetic wave reflected by the substrate within the near field area located at the end of the probe. The invention also concerns microlithography devices using this process.