Abstract: A semiconductor radiation imaging device includes an array of pixel cells having an array of pixel detectors which directly generate charge in response to incident radiation and a corresponding array of individually-addressable pixel circuits. Each pixel circuit is associated with a respective pixel detector for accumulating charge directly resulting from radiation incident on the pixel detector and includes threshold circuitry and charge accumulation circuitry. The threshold circuitry is configured to discard radiation hits on the pixel detector outside a predetermined threshold range, and the charge accumulation circuit is configured to accumulate charge directly resulting from a plurality of successive radiation hits on the respective pixel detector within the predetermined threshold range.

Abstract: An imaging device (6) for scan-imaging radiation includes an imaging cell array (3) comprising an array of detector cells generating charge in response to incident radiation (1) and an array of pixel circuits each pixel circuit associated with a respective detector cell. The pixel circuit includes circuitry for accumulating plural radiation hit on an associated detector cell and transfer circuitry shifting upon command the accumulated value of all pixels by one step in one dimension (e.g., row by row). The imaged object (2) moves at a speed VOPT (7) with respect to the radiation source and the imaging detector (or source and detector move at −VOPT with respect to the object) on which the accumulated values are shifted are with VTDI (8). VTDI may equal VOPT in value and direction. Thus, a value is accumulated in a moving information package using multiple pixels (10) and referring directly to a location on the moving object. The accumulated values are read out along one edge of the pixel array.

Abstract: A semiconductor radiation imaging assembly comprises a semiconductor imaging device including at least one image element detector. The imaging device is arranged to receive a bias for forming the at least one image element detector. The assembly also includes bias monitoring means for monitoring the bias for determining radiation incident on the image element detector. Preferably, the imaging device comprises a plurality of image element detectors the bias for at least some of which is monitored for determining incident radiation. More preferably, the bias for all the detector elements is monitored.

Abstract: A radiation imaging assembly includes a radiation imaging detector (160) including a plurality of image elements from which respective signals may be produced and a plurality of contacts for outputting said signals. A first substrate (154) is provided which comprises first and second major surfaces, said first major surface supporting said radiation imaging detector and providing support contacts for cooperating with respective contacts of said radiation imaging detector when mounted on said first surface. A second substrate for supporting electronic circuitry operable for said imaging device tile is also provided, said second substrate (158) disposed opposing said first substrate, and preferably disposed within the footprint of the first substrate.

Abstract: A method, suitable for forming metal contacts 31 on a semiconductor substrate 1 at positions for defining radiation detector cells, includes the steps of forming one or more layers of material 11, 12 on a surface of the substrate with openings 23 to the substrate surface at the contact positions; forming a layer of metal 24 over the layer(s) of material and the openings; and removing metal at 28 overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer 11 to be left between individual contacts on the substrate surface, may be applied during the method. A method according to the invention prevents etchants used for removing unwanted gold (or other contact matter) coming into contact with the surface of the substrate (e.g. CdZnTe) and causing degradation of the resistive properties of that substrate. The product of the method and uses thereof are also described.

Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits.

Abstract: An imaging device for radiation imaging is an array of image cells. The array of image cells consists of an array of detector cells and an array of image cell circuits. Each detector cell is connected to the corresponding cell in the array of image cell circuits. Each individual cell in the detector cell array generates a charge based on the radiation that hits the cell. Each cell in the array of image cell circuits accumulates the charge on a storage capacitor. The storage capacitor can be, for example, the gate of a transistor. Single cells in the array of image cells can be grouped together to form larger area super cells. The size of the super cell can be controlled by control signals, which select the operating mode. The output from a cell, a single cell or a super cell, is read out in current mode and is scaled according to the size of the cell. Several modes can be implemented in the imaging device.

Abstract: In a semiconductor imaging device, the distance between the edge of a substrate and an edge-most charge collection contact is made as small as possible, preferably less than 500 &mgr;m and/or less than ⅓ of the substrate thickness. Additionally or alternatively, a passivation layer is placed between the edge-most portion of the contact and the substrate surface and/or a field shaping conductor adjacent to the surface. A field shaping region may also be arranged outside the edge of the substrate and may encircle each detector device, or it may encircle an arrangement of several devices. In such an arrangement, the spacing between adjacent detectors should be less than 500 &mgr;m. A shield may also be used to shield the edge of each detector, or the edge region of the arrangement of several detectors, from incident radiation. Such arrangements can reduce the effect of edge image deterioration caused by strong field non-uniformities at the detector edges.

Abstract: A method, suitable for forming metal contacts 31 on a semiconductor substrate 1 at positions for defining radiation detector cells, includes the steps of forming one or more layers of material 11,12 on a surface of the substrate with openings 23 to the substrate surface at the contact positions; forming a layer of metal 24 over the layer(s) of material and the openings; and removing metal at 28 overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer 11 to be left between individual contacts on the substrate surface, may be applied during the method. A method according to the invention prevents etchants used for removing unwanted gold (or other contact matter) coming into contact with the surface of the substrate (e.g. CdZnTe) and causing degradation of the resistive properties of that substrate. The product of the method and uses thereof are also described.

Abstract: Radiation imaging apparatus includes a support structure for a number of modules which each in their turn support a number of imaging device tiles. An imaging device on each tile provides an array of radiation detector cells. With the modular construction, the apparatus can provide a large imaging array from a large number of individual tiles. The support structure may be located in or form part of an imaging cassette. The modules provide tile mounting locations in one or more rows for the imaging device tiles, whereby the tiles may be accurately mounted with respect the module and to each other prior to being mounted on the support structure. The tiles are mounted on the modules and the modules are mounted within the cassette in a removable manner to facilitate the replacement of faulty tiles when required and/or the replacement of tiles having different resolutions and/or specifications for different imaging applications. Various arrangements for electronically clustering tiles are provided.

Abstract: A semiconductor radiation imaging device is disclosed which includes an array of image elements, each image element of said array comprising an image element detector cell which generates charge in response to radiation incident on said image element and image element circuitry for accumulating said charge from said image element detector cell and for selectively outputting a signal representative of accumulated charge. The imaging device further includes a radiation sensor element, said radiation sensor element comprising a radiation detector cell integral with said image element detector cells for generating charge in response to incident radiation on said radiation sensor element and a radiation sensor output for continuously supplying charge from said radiation detector cell. Also disclosed is an imaging system employing image devices as described above, and a method of imaging radiation.

Abstract: An imaging apparatus includes a plurality of imaging device tiles arranged on an imaging support. Each of the imaging device tiles includes an imaging device having an imaging surface and a non-active region, wherein the imaging surface of a first imaging device tile at least partially overlies the non-active region of a second imaging device tile.

Abstract: Radiation imaging apparatus includes a support structure for a number of modules which each in their turn support a number of imaging device tiles. An imaging device on each tile provides an array of radiation detector cells. With the modular construction, the apparatus can provide a large imaging array from a large number of individual tiles. The support structure may be located in or form part of an imaging cassette. The modules provide tile mounting locations in one or more rows for the imaging device tiles, whereby the tiles may be accurately mounted with respect the module and to each other prior to being mounted on the support structure. The tiles are mounted on the modules and the modules are mounted within the cassette in a removable manner to facilitate the replacement of faulty tiles when required and/or the replacement of tiles having different resolutions and/or specifications for different imaging applications. Various arrangements for electronically clustering tiles are provided.

Abstract: A semiconductor radiation imaging device is disclosed which includes an array of image elements, each image element of said array comprising an image element detector cell which generates charge in response to radiation incident on said image element and image element circuitry for accumulating said charge from said image element detector cell and for selectively outputting a signal representative of accumulated charge. The imaging device further includes a radiation sensor element, said radiation sensor element comprising a radiation detector cell integral with said image element detector cells for generating charge in response to incident radiation on said radiation sensor element and a radiation sensor output for continuously supplying charge from said radiation detector cell. Also disclosed is an imaging system employing image devices as described above, and a method of imaging radiation.

Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.

Abstract: An imaging apparatus includes a plurality of imaging device tiles arranged on an imaging support. Each of the imaging device tiles includes an imaging device having an imaging surface and a non-active region, wherein the imaging surface of a first imaging device tile at least partially overlies the non-active region of a second imaging device tile.

Abstract: An imaging device includes one detector substrate with a plurality of readout substrates connected thereto. The detector substrate has a bias contact on a first surface and a number of detector cell contacts on a second surface. The readout substrate includes a plurality of readout circuits. The readout substrates are all mechanically connected to the detector substrate with the readout circuits electrically connected to respective detector cell contacts. To allow for areas of the readout substrates with no readout circuits or gaps between readout circuits, conductive tracks lead from selected detector positions to offset readout circuit position.

Abstract: A method of autoradiography imaging includes steps of: (a) forming a subject having at least first and second markers, each marker providing radiation having a characteristic energy distribution; (b) detecting radiation from the marked subject using a semiconductor radiation detector having an array of cells, each cell recording a charge value dependent on the energy of incident radiation; (c) processing the output from the cells including discriminating charge values within at least two charge value ranges and allocating a display color value to each pixel cell position in the array dependent upon the recorded charge value; and (d) forming an image for display with individual cell positions having a color representative of the color values. The method enables multiple label or multiple marker imaging in autoradiography to be performed by energy discriminating imaging, thus enhancing experimental accuracy and reproducibility.

Abstract: An imaging device for radiation imaging is an array of image cells. The array of image cells consists of an array of detector cells and an array of image cell circuits. Each detector cell is connected to the corresponding cell in the array of image cell circuits. Each individual cell in the detector cell array generates a charge based on the radiation that hits the cell. Each cell in the array of image cell circuits accumulates the charge on a storage capacitor. The storage capacitor can be, for example, the gate of a transistor. Single cells in the array of image cells can be grouped together to form larger area super cells. The size of the super cell can be controlled by control signals, which select the operating mode. The output from a cell, a single cell or a super cell, is read out in current mode and is scaled according to the size of the cell. Several modes can be implemented in the imaging device.

Abstract: An imaging device for radiation imaging is an array of image cells. The array of image cells consists of an array of detector cells and an array of image cell circuits. Each detector cell is connected to the corresponding cell in the array of image cell circuits. Each individual cell in the detector cell array generates a charge based on the radiation that hits the cell. Each cell in the array of image cell circuits accumulates the charge on a storage capacitor. The storage capacitor can be, for example, the gate of a transistor. Single cells in the array of image cells can be grouped together to form larger area super cells. The size of the super cell can be controlled by control signals, which select the operating mode. The output from a cell, a single cell or a super cell, is read out in current mode and is scaled according to the size of the cell. The read out line is pre-charged prior to read out to reduce the effect of parasitic capacitance in the read out line.