Abstract: A multilayered copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayered copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayered copper structure.

Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the present invention apparatus is a pulsing plasma source capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The present invention further provides a method to deposit highly controlled layered film on a workpiece. The method comprises the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the depositing layers. This procedure then can be repeated alternately until the film reaches a desired thickness.

Abstract: A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a conducting diffusion barrier layer and a poorly conducting adhesion-promoter layer in selected locations. The formation of a poorly conducting adhesion-promoter layer in selected locations permits the optimization of both contact resistance and adhesion property. The poorly conducting adhesion-promoter layer is formed either by the partial incorporation of oxygen into the diffusion barrier or by deposition in an oxygen ambient.

Abstract: A replaceable shielding apparatus provides a cost effective way of shielding a portion of a workpiece during processing. The apparatus includes a replaceable shield, made of comparable weight as the workpiece for allowing replacement of the shield in the same way as the replacement of the workpiece. With this feature, the replacement of the shield is a routine process and would not interfere much with the workpiece operation. The invention further includes a shield clamp for clamping the shield onto the workpiece. In a preferred embodiment, the invention further includes a non-reactive gas inlet for creating a pressurized cavity in the vicinity of the shielded portion of the workpiece.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to the chamber opening, the lid having an open position and a closed position. An actuator is connected to the lid to move the lid between the closed position and the open position. The system may include a floating pivot coupled to the lid and the actuator to align the lid with the opening when the lid closes.

Abstract: An integrated precursor delivery system which integrates a precursor delivery system with a processing chamber is provided for improving the precursor delivery lines to the processing chamber, and for keeping the delivery lines intact during servicing the processing chamber. The apparatus provides an integrated precursor delivery system mounted on the processing chamber lid with the chamber lid being removable for allowing manual access to the inside of the processing chamber. With the precursor delivery system is in the close vicinity of the processing chamber, the delivery lines are shortest possible, minimizing the chance of precursor contamination. With the delivery system and the chamber lid in one unit, the removal of the chamber lid will no longer require breaking the delivery lines, leading to better contamination control. The present invention is particular suitable for liquid precursors since liquid is much more difficult to evacuate than gas.

Abstract: A vaporizer is provided for vaporizing sensitive liquid precursors in semiconductor processing applications. The vaporizer uses high flow conductance with large flow area to avoid precursor decomposition. The vaporizer also uses efficient heat conduction to avoid local cold spots due to the heat loss because of the transformation from the liquid to gas phase. The vaporizer convex surface configuration also allow a more uniform distribution of the vaporized liquid precursor. In some aspects of the invention, the vaporizer distributes the precursor to a larger area, thus eliminating the need for a showerhead.

Abstract: A vapor supply apparatus, for use in a semiconductor device manufacturing process, provides high flow conductance and high thermal conductance showerhead plate for supplying various precursors to a reaction chamber. The high flow conductance and high thermal conductance showerhead plate comprises a thick plate for high thermal conductance and variable size delivery hole for high flow conductance. A variation of the high flow conductance and high thermal conductance showerhead plate having the delivery holes tilted outward can be used as a baffle to diffuse the precursor to a large area. A showerhead system using high flow conductance and high thermal conductance showerhead plates is well suitable for delivering liquid precursors.

Abstract: A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a nitrided metal diffusion barrier layer and an oxy-nitrided metal layer. The formation of an oxy-nitrided metal layer, instead of an oxide layer, permits the optimization of both contact resistance and adhesion property. The oxy-nitrided metal layer is formed either by the partial incorporation of oxygen into the nitrided metal diffusion barrier or by deposition in an oxygen ambient.

Abstract: A precursor delivery system emulsifier is provided for delivery a mixture of liquid and gas precursors. Since the liquid precursor is mixed with a gas, the flow pattern of the emulsified precursor can be controlled and modified and the relatively large flow rate of the emulsified precursor prevents the line from being clogged. Further, the mixing of the liquid precursor and gas at a site outside the vaporization chamber permits the liquid precursor line to remain cool, so that even the small diameter line remains unclogged.

Abstract: A vapor supply apparatus, for use in a semiconductor device manufacturing process, provides a three-dimensional showerhead for supplying various precursors to a reaction chamber. The three-dimensional showerhead comprises an inverted-cup structure having double walls, an outer wall and an inner wall, with the double walls defining a first interior volume and the inner wall defining an exterior cavity, the inverted-cup structure further has a plurality of first inlet ports connected to the outer wall for introducing first precursors into the first interior volume and a plurality of first outlet ports at the inner wall for discharging the first precursor vapor from the first interior volume to the exterior cavity. The three-dimensional showerhead confines the precursor vapor inside the external cavity to modify the processed film characteristics.

Abstract: A replaceable shielding apparatus provides a cost effective way of shielding a portion of a workpiece during processing. The apparatus includes a replaceable shield, made of comparable weight as the workpiece for allowing replacement of the shield in the same way as the replacement of the workpiece. With this feature, the replacement of the shield is a routine process and would not interfere much with the workpiece operation. The invention further includes a shield clamp for clamping the shield onto the workpiece. In a preferred embodiment, the invention further includes a non-reactive gas inlet for creating a pressurized cavity in the vicinity of the shielded portion of the workpiece.

Abstract: A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintaining the rest of the shield cooler. The apparatus comprises a multi-thermal zone shield having a low thermal transmitivity section for preventing the heat lost of the shielded portion of the hot workpiece due to less thermal energy transmitting through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmitivity section in the rest of shield for allowing more thermal energy from the hot workpiece transmitting through the shield without heating the shield, thus maintaining a cooler temperature at the portion of the shield not engaged with the workpiece.