Abstract: A process of operating a memory array includes performing all volatile and nonvolatile operations on an nvDRAM cell array via a single data interface and using only DRAM-level signals on the data interface.

Abstract: A method of operating a nonvolatile memory circuit having a plurality of transistors arranged in series between a voltage/current source node and recall sink node includes asserting a gate bias on an isolation transistor between the source node and a charge storage transistor during nonvolatile STANDBY.

Abstract: A memory cell array includes reference cells each associated with a plurality of data cells of the array.

Abstract: A memory circuit includes a high voltage region providing storage of a nonvolatile bit, and a low voltage region providing at least partial storage of a volatile bit. The high and low voltage regions are isolated from one another and formed by a plurality of transistors in series between a current source and a bit line.

Abstract: A memory circuit includes a single transistor storing both volatile and nonvolatile bit charges.

Abstract: A memory system power management process includes providing a first level of power to operate a memory system while a primary power source is enabled, detecting an interruption of the primary power source, increasing a frequency of an oscillator driving a charge pump of a power converter providing the first level of power, and beginning a memory operation that increases a load on the power converter.

Abstract: A memory circuit includes volatile memory cells coupled to bit lines, and nonvolatile memory cells coupled to the volatile memory cells via the bit lines but not via complement bit lines.

Abstract: A memory access device includes logic to switch data from a processor memory bus to a memory bus in a first operational mode, and to switch data from a test bus to the memory bus in a second operational mode, and logic to switch address signals from the processor memory bus to the memory bus in the first operational mode. In the second operational mode the device accepts from the test bus a starting memory address for memory reads and writes, and automatically and independently of the test bus adjusts a memory address for reads and writes during burst memory operations.

Abstract: A memory subsystem may include logic to make available to the device into which it is installed at least one portion of the volatile memory that will be backed up to the nonvolatile memory in the event of device power failure. The logic may make available to the device at least one portion of the volatile memory that will not be backed up to the nonvolatile memory in the event of device power failure, and make available to the device at least one portion of the nonvolatile memory that is not reserved for backups from the volatile memory.

Abstract: A memory subsystem includes a volatile memory, a nonvolatile memory, and a controller including logic to interface the volatile memory to an external system. The volatile memory is addressable for reading and writing by the external system. The memory subsystem includes a power controller with logic to detect when power from the external system to at least one of the volatile and nonvolatile memories and to the controller fails. When external system power fails, backup power is provided to at least one of the volatile and nonvolatile memories and to the controller for long enough to enable the controller to back up data from the volatile memory to the nonvolatile memory.

Abstract: A memory subsystem includes volatile memory and nonvolatile memory, and logic to interrupt a power down save operation of the memory subsystem upon detection of a restoration of system power, and to enable use of the memory subsystem by the system if sufficient nonvolatile memory capacity of the memory subsystem is available to backup an amount of the volatile memory capacity of the memory subsystem.

Abstract: A memory subsystem is configured to obtain power from an external system and from at least one power capacitors. The memory subsystem includes logic to verify the power delivery capability of the power capacitors.

Abstract: A memory circuit includes a controlled current source coupled to an input to a nonvolatile cell, and a second controlled current source coupled to a volatile cell, the volatile cell coupled to receive current from the controlled current source via the nonvolatile cell.