Abstract: A pulsed electron beam generator produces a short duration pulse of electrons in the form of a directed beam for thermal processing of a semiconductor device, which is positioned in a pulsed electron beam chamber so that the propagating electron beam impacts upon the device surface in selected regions of the device that are to be processed. Energy deposited by the impacting electron pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the electron beam pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature, the remaining mass of the semiconductor device not being subjected to unnecessary or undesirable high temperature exposure.

Abstract: An evacuated enclosure in the form of a cylindrical cavity having a dielectric located therein defines a dielectric guide for transporting an electron beam introduced into the cavity. The dielectric, which is disposed about the cavity wall, is operative to trap the charge associated with normal vacuum expansion of the electron beam. The trapped charge, in cases where the injected electron beam is not space charge limited, modifies the electric fields within the cavity in such a way as to provide focusing forces on the electron beam propogating through the cavity, the focusing forces being sufficient to guide a major portion of the beam through the enclosure without attenuation. Within the injected beam is space charge limited, the trapped charge induces an electrical discharge -- either surface flashover or volume puncture of the dielectric -- which liberates gaseous material.

Abstract: A pulsed electron beam generator produces a short duration pulse of electrons in the form of a directed beam for thermal processing of a semiconductor device, which is positioned in a pulsed electron beam chamber so that the propagating electron beam impacts upon the device surface in selected regions of the device that are to be processed. Energy deposited by the impacting electron pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the electron beam pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature, the remaining mass of the semiconductor device not being subjected to unnecessary or undesirable high temperature exposure.