Patents Assigned to Singulus MOCVD GmbH I.GR.
  • Patent number: 9169562
    Abstract: Described is a parallel batch CVD system that includes a pair of linear deposition chambers in a parallel arrangement and a robotic loading module disposed between the chambers. Each chamber includes a linear arrangement of substrate receptacles, gas injectors to supply at least one gas in a uniform distribution across the substrates, and a heating module for uniformly controlling a temperature of the substrates. The robotic loading module is configured for movement in a direction parallel to a length of each of the chambers and includes at least one cassette for carrying substrates to be loaded into the substrate receptacles of the chambers. The parallel batch CVD system is suitable for high volume processing of substrates. The CVD processes performed in the chambers can be the same process. Alternatively, the CVD processes may be different and substrates processed in one chamber may be subsequently processed in the other chamber.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: October 27, 2015
    Assignee: Singulus MOCVD GMBH I. GR.
    Inventors: Piero Sferlazzo, Darren M. Simonelli
  • Patent number: 8986451
    Abstract: Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.
    Type: Grant
    Filed: May 25, 2010
    Date of Patent: March 24, 2015
    Assignee: Singulus MOCVD GmbH I. GR.
    Inventor: Piero Sferlazzo
  • Patent number: 8865259
    Abstract: Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.
    Type: Grant
    Filed: June 9, 2011
    Date of Patent: October 21, 2014
    Assignee: Singulus MOCVD GmbH I.GR.
    Inventors: Piero Sferlazzo, Thomas Michael Lampros