Patents Assigned to SiOnys, Inc.
  • Highly-depleted laser doped semiconductor volume
    Patent number: 8143688
    Abstract: A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: March 27, 2012
    Assignee: SiOnys, Inc.
    Inventors: Nathaniel J. McCaffrey, James E. Carey